Ni-based sputtering target and magnetic recording medium

Abstract

The object of the present invention is to provide a Ni-based sputtering target material with low magnetic permeability and high leakage magnetic flux that can be used efficiently in magnetron sputtering. In order to solve this problem, a Ni-based sputtering target is provided. material, which contains Fe x -Ni y -Co z - A Ni-based sputtering target made of an M-based alloy, wherein the alloy contains, as the M element, one or more of W, Mo, Ta, Cr, V, and Nb. M1 element, 2 to 20 at.% in total, containing one or more M2 selected from Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and Ru Elements, 0-10 at% in total, the balance is composed of Ni, one or two of Fe and Co, and unavoidable impurities. When x+y+z=100, x is 0-50, y is 20 to 98, and z is 0 to 60, the alloy contains Fe α -Ni β -Co γ phase, when α+β+γ=100, β is 20 to 35, and γ is 30 or less, the microstructure contains α -Ni β -Co γ The M element in solid solution in the phase; and / or the M element that forms a compound with at least one element among Fe, Ni and Co.

Description

technical field [0001] The present invention relates to a Ni-based sputtering target material and a magnetic recording medium, in particular to a seed crystal of a magnetic recording medium that has low magnetic permeability in a perpendicular magnetic recording medium, can obtain strong leakage magnetic flux, and has high utilization efficiency of magnetron sputtering layer with sputtering targets and magnetic recording media. Background technique [0002] In recent years, the progress of perpendicular magnetic recording has been remarkable. In order to increase the capacity of the drive, the recording density of the magnetic recording medium has been increased. Using the in-plane magnetic recording medium that has been popular in the past, the perpendicular magnetic recording method that can achieve higher recording density has been put into practical use. change. Here, the perpendicular magnetic recording method is a method in which the magnetic film of a perpendicular m...

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Problems solved by technology

[0011] However, the method of Patent Document 2 can only be applied to Co-Fe targets for soft magnetic layers, and cannot be used for targets for seed layers.

In addition, the Fe-25 to 35 atomic % Ni alloy powder used in Patent Document 2 is a binary system of Fe and Ni, and there is no example of using a powder to which a third element is added.

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