Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Coating processing method, computer storage medium, and coating processing device

A processing method and technology for processing devices, which are applied to devices for applying liquid to surfaces, pre-treatment surfaces, coatings, etc., can solve problems such as deterioration of uniformity of coating films

Inactive Publication Date: 2017-12-01
TOKYO ELECTRON LTD
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in the coating process of coating an expensive coating liquid such as resist liquid, it is necessary to suppress the supply amount as much as possible, but if the supply amount is reduced, the in-plane uniformity of the coating film will deteriorate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Coating processing method, computer storage medium, and coating processing device
  • Coating processing method, computer storage medium, and coating processing device
  • Coating processing method, computer storage medium, and coating processing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0108] As an example, an ArF resist with a viscosity of 1.0 cP was used as the resist liquid R, and cyclohexanone was used as the solvent Q, and a test was carried out by coating the resist liquid on the wafer W by the coating treatment method of this embodiment. . At this time, the supply amount of the resist liquid R was changed between 0.20 mL and 0.30 mL at 0.05 mL intervals, and the wafer W was placed on the Figure 7 time t 1 ~t 2 The time for rotating at a rotation speed of 2000 rpm was changed to 2 seconds, 5 seconds, and 8 seconds to change the film thickness of the first liquid film M1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In the present invention, a coating processing method in which a coating liquid is coated onto a substrate involves the following: a solvent liquid-film forming step in which a first liquid film is formed by a solvent on a central portion of the substrate, and a ring-shaped second liquid film having a greater thickness than the first liquid film is formed by the solvent on the outer peripheral portion of the substrate; a coating liquid supply step in which the coating liquid is supplied to the central portion of the substrate while the substrate is caused to rotate at a first rotational speed; and a coating liquid dispersion step in which the substrate is caused to rotate at a second rotational speed, that is faster than the first rotational speed, while the coating liquid is supplied, thereby dispersing the coating liquid onto the substrate.

Description

technical field [0001] (Cross-reference of related applications) [0002] This application claims priority based on Japanese Patent Application No. 2015-041679 filed in Japan on March 3, 2015, and uses the content thereof. [0003] The present invention relates to a coating treatment method for coating a coating liquid on a substrate, a computer-readable storage medium, and a coating treatment device. Background technique [0004] For example, in the photolithography step in the manufacturing process of semiconductor devices, for example, a predetermined coating liquid is applied on a semiconductor wafer (hereinafter referred to as "wafer") as a substrate, and an antireflection film and a resist film are formed. A coating process of a coating film; an exposure process of exposing a resist film to a predetermined pattern; and a development process of developing the exposed resist film etc. form a predetermined resist pattern on a wafer. [0005] In the above-mentioned coati...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B05D1/40B05C11/08
CPCG03F7/091G03F7/162G03F7/2028H01L21/6715H01L21/67253H01L21/02282H01L21/02307B05D1/40B05D1/005B05C11/08B05D3/0413B05D3/104H01L21/027
Inventor 桥本崇史畠山真一柴田直树吉原孝介
Owner TOKYO ELECTRON LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com