High-purity tungsten hexacarbonyl for solid source delivery

一种六羰基钨、来源的技术，应用在固体来源材料领域，能够解决腐蚀微电子器件、激发替代钨来源试剂寻求、影响来源材料的性能及工艺可重复性等问题

Active Publication Date: 2017-12-01
ENTEGRIS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although tungsten hexafluoride is commonly used as a precursor, tungsten hexafluoride is associated with a number of disadvantages that have motivated the search for alternative tungsten-derived reagents
These disadvantages of tungsten hexafluoride include depletion of interfacial silicon and corrosion of microelectronic devices due to the generation of by-product gas hydrogen fluoride when depositing tungsten from tungsten hexafluoride
Changes in the above variables may affect the performance of the source material and the repeatability of the process

Method used

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  • High-purity tungsten hexacarbonyl for solid source delivery
  • High-purity tungsten hexacarbonyl for solid source delivery
  • High-purity tungsten hexacarbonyl for solid source delivery

Examples

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Effect test

example I

[0055] Tungsten hexacarbonyl vaporization tests were performed to evaluate solid source materials for tungsten hexacarbonyl.

[0056] A thermopile infrared (TPIR) detector was used to monitor vapors generated during operation of a vaporizer ampoule containing tungsten hexacarbonyl material. The TPIR detector utilizes a 1-meter linear unit configured with a reference channel, a channel for "free" carbon monoxide (CO), a channel for carbon dioxide (CO 2 ), and a channel configured for CO coordinated to the metal center at 5.0 microns to be able to detect W(CO) in the 5.0 micron filtered channel 6 and Mo(CO) 6 both.

[0057] The first vaporizer vessel (designated NSI Ampoule #1) was operated with granular tungsten hexacarbonyl material having the particle size distribution shown in Table 1 below.

[0058] Table 1

[0059] Granularity (mm)

Test 1(g)

Test 1(%)

Test 2(g)

average (g)

average(%)

>1.4

20.18

19.05

20.25

20.22

19.59 ...

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PUM

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Abstract

A solid source material is described for forming a tungsten-containing film. The solid source material is tungsten hexacarbonyl, wherein content of molybdenum is less than 1000 ppm. Such solid source material may be formed by a process including provision of particulate tungsten hexacarbonyl raw material of particles of size less than 5 mm, wherein particles of size greater than 1.4 mm are less than 15% of the particles, and wherein content of molybdenum is less than 1000 ppm, and sintering the particulate tungsten hexacarbonyl raw material at temperature below 100 DEG C to produce the solid source material as a sintered solid.

Description

[0001] Cross References to Related Applications [0002] Authorized by Thomas H. Baum, Robert L. Wright, Jr., Scott L. Battle, and John The 62nd / Interest in U.S. Provisional Patent Application No. 129,368. The disclosure of US Provisional Patent Application No. 62 / 129,368 is hereby incorporated by reference in its entirety for all purposes. technical field [0003] The present invention relates to: a solid source material for forming a tungsten-containing film, a process for manufacturing and using the solid source material, and a package for supplying the solid source material, such as for large-scale integrated circuits Metalization. Background technique [0004] The manufacturing technology of large-scale integrated circuits continues to pursue improved metallization reagents and processes. Tungsten is utilized as a metallization material in such applications due to its good electrical conductivity, high melting point and high electromigration durability, for exampl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/16C23C16/44
CPCC23C16/448C23C16/16C23C16/18C07F11/00C01G41/006
Inventor T·H·鲍姆R·L·赖特二世S·L·巴特尔J·M·克利里
Owner ENTEGRIS INC
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