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Wafer Polishing Method

A wafer and film thickness technology, applied in polishing machine tools, grinding machine tools, manufacturing tools, etc., can solve problems such as poor surface roughness of wafers, achieve good roughness and save process time.

Active Publication Date: 2021-02-12
ACM RES SHANGHAI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the consequence of this is that after each polishing, a certain amount of polishing liquid will remain on the wafer surface, and after electrochemical polishing, a large number of tiny bubbles will be formed in the remaining polishing liquid. If the polishing is continued, the polishing will end. After the wafer surface roughness becomes very poor

Method used

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Embodiment Construction

[0014]The technical scheme of the present invention will be further disclosed in conjunction with the accompanying drawings as follows:

[0015]Such asFigure 4 As shown, the present invention uses the same equipment as the prior art to polish the wafer. The equipment includes a wafer holder 401, a shower head 403, and a power supply 404. The wafer clamp 401 is used to clamp the wafer 402 and drive the wafer 402 to rotate. The wafer holder 401 can drive the wafer to rotate at a low speed and uniform speed. In addition, the wafer holder 401 can also be moved horizontally, so that every point on the surface of the wafer 402 can be polished. The spray head 403 is electrically connected to the negative electrode of the power supply 404, and the polishing liquid 405 is sprayed to the wafer 402 during the process.

[0016]Although the present invention uses the same equipment as the prior art, it is different in the process method. Such asFigure 5As shown, the wafer polishing method of the prese...

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Abstract

The invention discloses a wafer polishing method, the method comprising: a film thickness measurement step of measuring the film thickness of the wafer; a wafer moving step of moving the wafer to a process position; pre-wetting and electrochemical polishing steps , the wafer is electrochemically polished after pre-wetting the wafer; the subsequent processing step is to perform subsequent processing on the wafer; according to the film thickness of the wafer, the steps of pre-wetting and electrochemical polishing are repeated several times before entering the subsequent processing step . By adopting the technical scheme of the invention, the process time can be greatly shortened, and the polished wafer surface can be guaranteed to have good roughness.

Description

Technical field[0001]The invention relates to the field of semiconductor production and processing, and more specifically, to a wafer polishing method.Background technique[0002]The traditional Stress Free Polish process is referred to as the SFP process in the industry. Such asfigure 1 As shown, a complete SFP process includes a film thickness measurement step 101, a wafer transfer step 102, a pre-wetting step 103, a polishing step 104, and a subsequent processing step 105. The subsequent processing step 105 includes multiple steps such as a drying step, a cleaning step, and an unloading step. Due to the limitation of many factors such as power supply, polishing liquid and heat dissipation, the thickness of a single polishing of the traditional SFP process is generallyIn order to make the quality of the wafer meet the requirements, polishingThe thickness is far from enough.[0003]For exceedingThe current practice is to repeat the whole set of SFP process according to the film thickne...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/04B24B39/06H01L21/304
CPCB24B37/04B24B39/06H01L21/304
Inventor 代迎伟金一诺王坚王晖
Owner ACM RES SHANGHAI