Semiconductor device and method of forming the same

Abstract

The invention provides a semiconductor device and a formation method thereof. The formation method of the semiconductor device comprises the steps of forming a patterned mask on a substrate, wherein the patterned mask comprises a cushion oxide layer and a silicon nitride layer, and the silicon nitride layer is arranged on the cushion oxide layer; implanting a first etching process on the substrate by the patterned mask to form a groove; forming a dielectric material layer in the groove and on the patterned mask; implementing a planarization process to remove the dielectric material layer outside the groove; implementing a thermal treatment process; and forming an oxide part, adjacent to the dielectric material layer, on an interface of the cushion oxide layer and the substrate. In the semiconductor device, a relatively smooth grid oxide layer surface is formed at a joint of an isolation structure and an active region, so that the completeness of the grid oxide layer is improved, the probability of point discharge and electric collapse effect is reduced, and the efficiency and the reliability of the semiconductor device are improved.

Description

technical field [0001] The present invention relates to semiconductor devices, in particular to isolation structures and methods for forming semiconductor devices. Background technique [0002] A part of the semiconductor device is formed in the substrate, and an active region is separated by an isolation structure formed in the substrate. As the size of semiconductor devices continues to shrink and the device density continues to increase, the traditional local oxidation of silicon (LOCOS) isolation technology is prone to surface roughness and the problems of bird’s beak effect (bird’s beak effect) cannot be ignored. Therefore, shallow trench isolation (shallow trench isolation, STI) has become a commonly used isolation technology for semiconductor devices below 0.25 microns (μm). [0003] Although the existing semiconductor devices and their formation methods have developed enough on the isolation structure to cope with their original intended use, they still have not com...

AI Technical Summary

Problems solved by technology

[0003] Although the existing semiconductor devices and their formation methods have developed enough on the isolation structure to cope with their original intended use, they still have not completely met the requirements in all aspects, so the isolation technology of semiconductor devices still needs to be worked hard. direction

Images