CMOS image sensor structure for preventing scribing damage and fabrication method thereof

Abstract

The present invention discloses a CMOS image sensor structure preventing from scribing damaging and a manufacturing method thereof. First hollow grooves and second hollow grooves which are communicated are formed at the upper and lower surfaces of the silicon substrate of the peripheral areas of circuit silicon wafer chips, and are combined with protection rings arranged in a first dielectric layer and located below the first hollow grooves and the second hollow grooves, a composite protection ring structure is formed at the peripheral area of the internal area of each chip to allow the crack caused by scribing damaging in a scribing groove area to be shielded by the first hollow grooves and the second hollow grooves, and the crack cannot be continuously extended to the internal area of each chip along the silicon substrate so as not to cause bad influence on the chips, ensure the performance and functions of the CMOS image sensor and improve the yield and the reliability.

Description

technical field [0001] The present invention relates to the technical field of CMOS image sensors, in particular to a CMOS image sensor structure capable of preventing scribing damage and a manufacturing method thereof. Background technique [0002] An image sensor refers to a device that converts optical signals into electrical signals. Large-scale commercial image sensor chips include charge-coupled device (CCD) and complementary metal-oxide semiconductor (CMOS) image sensor chips. Compared with traditional CCD sensors, CMOS image sensors have the characteristics of low power consumption, low cost and compatibility with CMOS technology, so they are more and more widely used. CMOS image sensors are now not only used in consumer electronics such as miniature digital cameras (DSC), mobile phone cameras, video cameras and digital single-lens reflex cameras (DSLR), but also in automotive electronics, monitoring, biotechnology and medical fields. [0003] CMOS image sensors can...

AI Technical Summary

Problems solved by technology

Since damage 11 is likely to occur on the edge of the cut scribe line, and the damage caused by the cutting of these silicon wafers will evolve into a crack 11 ′, which extends from the cut scribe line area E’ along the silicon substrate 12 to the chip. The inner area C' may cause performance degradation such as increase of dark current of CMOS image sensor, increase of white pixels, etc., and may even cause failure of the entire chip in severe cases.

Images