Band-gap reference voltage source

A reference voltage source and level technology, applied in the direction of adjusting electrical variables, instruments, control/regulation systems, etc., can solve problems such as inability to effectively compensate high-order temperature coefficients

Active Publication Date: 2017-12-19
BEIJING SMARTCHIP SEMICON TECH CO LTD +2
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  • Summary
  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] The purpose of the present invention is to provide a bandgap reference voltage source, thereby overcoming the defect that the existing bandgap reference voltage source cannot effectively compensate high-order temperature coefficients

Method used

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Embodiment Construction

[0032] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, but it should be understood that the protection scope of the present invention is not limited by the specific embodiments.

[0033] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention. Unless expressly stated otherwise, throughout the specification and claims, the term "co...

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Abstract

The invention discloses a band-gap reference voltage source. The band-gap reference voltage source comprises a level switching circuit, a first field-effect tube, a second field-effect tube, a third field-effect tube, a first audion, a second audion, a third audion, a first resistor, a second resistor and a clamping circuit. The level switching circuit is used for generating identical first-order positive temperature coefficient voltage at the first end and the second end according to voltage input at the input end. According to the band-gap reference voltage source, the identical positive temperature coefficient voltage is introduced to a drain electrode of MP1 and a drain electrode of MP2, the channel length modulation effect of MP1 and MP2 is used for eliminating or reducing the second-order temperature coefficient, and therefore second-order temperature coefficient compensation is achieved.

Description

technical field [0001] The invention relates to the technical field of integrated circuit design, in particular to a bandgap reference voltage source. Background technique [0002] At present, integrated circuit chip design is inseparable from analog circuit design and digital circuit design. With the reduction of process size and the improvement of chip integration, the difficulty of analog circuit design is getting higher and higher. The non-ideal effect, power consumption, area, voltage range and accuracy of devices may become the bottleneck restricting the performance of analog circuits and even the performance of the entire chip. [0003] As the core module of the analog circuit, the on-chip bandgap reference source provides reference voltage (or reference current) for all analog modules. Its principle is to superimpose the voltage of the positive temperature coefficient and the voltage of the negative temperature coefficient with a certain coefficient to obtain a ban...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/567
CPCG05F1/567
Inventor 杨小坤赵东艳张海峰唐晓柯原义栋胡毅何洋李振国
Owner BEIJING SMARTCHIP SEMICON TECH CO LTD
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