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Antireflection film and polycrystalline silicon solar cell

A technology of anti-reflection film and film layer, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., and can solve the problems of high reflectivity and poor anti-PID performance

Pending Publication Date: 2017-12-19
CSI CELLS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an anti-reflection film and a polysilicon solar cell to solve the technical problems of high reflectivity and poor anti-PID performance in the existing anti-reflection film

Method used

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  • Antireflection film and polycrystalline silicon solar cell
  • Antireflection film and polycrystalline silicon solar cell
  • Antireflection film and polycrystalline silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] combine Figure 1 to Figure 3 As shown, the first embodiment provides an anti-reflection film, which at least includes a silicon nitride oxide film layer and a silicon nitride gradient film layer, and a laminated layer is formed between the silicon nitride oxide film layer and the silicon nitride gradient film layer. film structure. It can be seen that the film structure has the effect of reducing reflectivity and anti-PID performance. It can be understood that both the silicon oxynitride film layer and the silicon nitride graded film layer can be understood as a layered film structure with a certain thickness, and the anti-reflection film is formed by stacking these two layered film structures. Among them, the silicon nitride oxide film layer has the performance of anti-PID, and the silicon nitride gradient film layer has the effect of reducing the reflectivity.

[0062] In this embodiment, PECVD can be used for coating, and the silicon nitride oxide film layer and t...

Embodiment 2

[0065] combine figure 1 As shown, the second embodiment provides a further technical solution on the basis of the first embodiment.

[0066] The antireflection film comprises a first silicon nitride oxide film layer 3a, a first silicon nitride film layer 2a and a first silicon nitride gradient film layer 1a; the first silicon nitride film layer 2a is deposited on the first silicon nitride oxide film layer On top of 3a, the first graded silicon nitride film layer 1a is deposited on the first silicon nitride film layer 2a. Of course, the first silicon oxynitride film layer 3 a will also be correspondingly deposited on the silicon substrate 4 during film coating. The anti-reflection film in this embodiment has a three-layer film structure, wherein the first silicon nitride oxide film layer 3a has the performance of anti-PID, the first silicon nitride gradient film layer 1a has the effect of reducing reflectivity, and the first silicon nitride film layer 3a has the effect of redu...

Embodiment 3

[0085] combine figure 2 As shown, the third embodiment provides a further technical solution on the basis of the first embodiment.

[0086] The antireflection film includes a second silicon nitride film layer 2b, a second silicon nitride gradient film layer 1b and a second silicon nitride oxide film layer 3b; the second silicon nitride gradient film layer 1b is deposited on the second silicon nitride film On the layer 2b, a second silicon nitride oxide film layer 3b is deposited on the second silicon nitride gradient film layer 1b. Of course, the second silicon nitride film layer 2b will also be correspondingly deposited on the silicon substrate 4 during film coating. The anti-reflection film in this embodiment has a three-layer film structure, wherein the second silicon nitride oxide film layer 3b has anti-PID performance, the second silicon nitride gradient film layer 1b has the effect of reducing reflectivity, and the second silicon nitride film layer 1b has the effect of...

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Abstract

The invention relates to the technical field of a polycrystalline silicon solar cell, and particularly relates to an antireflection film and the polycrystalline silicon solar cell. The antireflection film at least comprises a silicon oxynitride film layer and a silicon nitride gradually changed film layer; and a lamination-shaped thin film structure is formed between the silicon oxynitride film layer and the silicon nitride gradually changed film layer, wherein the refractive index of the silicon nitride gradually changed film layer is gradually changed from high to low, so that light reflection is reduced, thereby realizing decreasing of reflectivity; and meanwhile, the silicon oxynitride film layer has PID resistance performance.

Description

technical field [0001] The invention relates to the technical field of polycrystalline silicon solar cells, in particular to an antireflection film and polycrystalline silicon solar cells. Background technique [0002] The main trend of solar cell development is high conversion efficiency and low cost. In order to improve the conversion efficiency of the battery, it is necessary to reduce the light reflection on the surface of the battery and increase the effective absorption of light. The use of anti-reflection coatings to reduce the reflection loss of light on the surface of the battery is a way to increase conversion and reduce costs. [0003] At present, the crystalline silicon solar cell industry generally adopts PEVCD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition) method to produce anti-reflection film, and the special gas commonly used in the corresponding tubular PEVCD machine is ammonia and silane. The machine can only quant...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216
CPCH01L31/02168Y02E10/50
Inventor 袁中存党继东
Owner CSI CELLS CO LTD
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