Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Vehicle-mounted IGBT (Insulated Gate Bipolar Transistor) state monitoring method and device

A state monitoring device and state technology, applied in the direction of single semiconductor device testing, etc., can solve problems such as inability to effectively realize IGBT state evaluation, and achieve the effect of overcoming the inability to fully characterize the degradation state of IGBT

Active Publication Date: 2018-01-05
CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a vehicle-mounted IGBT state monitoring method and device to solve the technical problem that the state evaluation of the IGBT cannot be effectively realized in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vehicle-mounted IGBT (Insulated Gate Bipolar Transistor) state monitoring method and device
  • Vehicle-mounted IGBT (Insulated Gate Bipolar Transistor) state monitoring method and device
  • Vehicle-mounted IGBT (Insulated Gate Bipolar Transistor) state monitoring method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] figure 1 It is a schematic flow chart of a method for monitoring the state of an on-board IGBT according to Embodiment 1 of the present invention; figure 1 As shown, this embodiment provides a vehicle-mounted IGBT state monitoring method, including:

[0049] Step 101: Collect operating condition information and end characteristic parameter data of the IGBT, where the operating condition information includes the temperature, humidity and operating load of the IGBT; the end characteristic parameter data includes the saturation voltage drop, turn-on voltage, conduction, etc. of the IGBT Effective resistance, threshold voltage, gate current, turn-on time and turn-off time.

[0050] Step 102: Construct an IGBT degradation factor according to the operating condition information and the end characteristic parameter data.

[0051] Specifically, the numerical value of IGBT operating condition information forms a set C i =(C 1i , C 2i , C 3i ) T ; C i Means that at time t i Correspondin...

Embodiment 2

[0055] This embodiment is a supplementary explanation based on the above embodiment.

[0056] figure 2 It is a schematic flow chart of a method for monitoring the state of an on-board IGBT provided by the second embodiment of the present invention; figure 2 As shown, this embodiment provides a vehicle-mounted IGBT state monitoring method, including:

[0057] Step 101: Collect operating condition information and end characteristic parameter data of the IGBT.

[0058] Step 1021, according to the working condition information, the end characteristic parameters and the measurement time point, the triad (C i , X i , T i ), where t i Is the measurement time point, C i Is t i Working condition information obtained at time, X i Is t i The end characteristic parameter obtained at time, i is a positive integer;

[0059] Step 1022: Use a clustering or classification method to process the working condition information to obtain multiple groups of classified working condition information.

[0060]...

Embodiment 3

[0077] This embodiment is an apparatus embodiment, and is used to execute the method in the first embodiment above.

[0078] image 3 It is a schematic structural diagram of a vehicle-mounted IGBT state monitoring device provided in the third embodiment of the present invention; image 3 As shown, this embodiment provides a vehicle-mounted IGBT state monitoring device, which includes a data acquisition module 201, a degradation factor acquisition module 202, and a degradation state monitoring module 203.

[0079] Among them, the data acquisition module 201 is used to collect the operating condition information and end characteristic parameter data of the IGBT. The operating condition information includes the temperature, humidity and operating load of the IGBT; the end characteristic parameter data includes the saturation voltage drop and the conductance of the IGBT. Turn-on voltage, turn-on equivalent resistance, threshold voltage, gate current, turn-on time and turn-off time;

[00...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a vehicle-mounted IGBT (Insulated Gate Bipolar Transistor) state monitoring method and device. The vehicle-mounted IGBT state monitoring method comprises the steps of collectingoperating condition information and end part characteristic parameter data of an IGBT, wherein the operating condition information comprises the temperature, humidity and operating load of the IGBT,and the end part characteristic parameter data comprises saturation voltage drop, conduction voltage, conduction equivalent resistance, threshold voltage, gate current, turn-on time and turn-off timeof the IGBT; constructing an IGBT degradation factor according to the operating condition information and the end part characteristic parameter data; and evaluating the state of the IGBT according tothe IGBT degradation factor. The method provided by the invention combines the operating condition information and the end part characteristic parameter information of the IGBT, has certain adaptability for dynamic operating conditions, and can overcome a defect that the single end part characteristic parameter cannot comprehensively represent the degradation state of the IGBT.

Description

Technical field [0001] The invention relates to the field of semiconductor devices, and in particular to a method and device for monitoring the state of an on-board IGBT. Background technique [0002] In the field of rail transit, the current test solutions for various subsystems, key equipment and core components in the train can only complete the test and evaluation of their basic functions and technical indicators, and the ground monitoring station or on-board management system can only pass Basic condition monitoring information interpretation realizes condition monitoring analysis and decision-making management, but it cannot conduct real-time assessment of the degradation state affected by the specific environment and working conditions in the actual operation process. Therefore, how to effectively evaluate the degraded state of trains in real time and provide effective support for the comprehensive guarantee and maintenance of trains has become an urgent technical problem ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
Inventor 尚敬徐勇许为江平罗源韩露
Owner CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products