Vehicle-mounted IGBT (Insulated Gate Bipolar Transistor) state monitoring method and device
A state monitoring device and state technology, applied in the direction of single semiconductor device testing, etc., can solve problems such as inability to effectively realize IGBT state evaluation, and achieve the effect of overcoming the inability to fully characterize the degradation state of IGBT
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Embodiment 1
[0048] figure 1 It is a schematic flow chart of a method for monitoring the state of an on-board IGBT according to Embodiment 1 of the present invention; figure 1 As shown, this embodiment provides a vehicle-mounted IGBT state monitoring method, including:
[0049] Step 101: Collect operating condition information and end characteristic parameter data of the IGBT, where the operating condition information includes the temperature, humidity and operating load of the IGBT; the end characteristic parameter data includes the saturation voltage drop, turn-on voltage, conduction, etc. of the IGBT Effective resistance, threshold voltage, gate current, turn-on time and turn-off time.
[0050] Step 102: Construct an IGBT degradation factor according to the operating condition information and the end characteristic parameter data.
[0051] Specifically, the numerical value of IGBT operating condition information forms a set C i =(C 1i , C 2i , C 3i ) T ; C i Means that at time t i Correspondin...
Embodiment 2
[0055] This embodiment is a supplementary explanation based on the above embodiment.
[0056] figure 2 It is a schematic flow chart of a method for monitoring the state of an on-board IGBT provided by the second embodiment of the present invention; figure 2 As shown, this embodiment provides a vehicle-mounted IGBT state monitoring method, including:
[0057] Step 101: Collect operating condition information and end characteristic parameter data of the IGBT.
[0058] Step 1021, according to the working condition information, the end characteristic parameters and the measurement time point, the triad (C i , X i , T i ), where t i Is the measurement time point, C i Is t i Working condition information obtained at time, X i Is t i The end characteristic parameter obtained at time, i is a positive integer;
[0059] Step 1022: Use a clustering or classification method to process the working condition information to obtain multiple groups of classified working condition information.
[0060]...
Embodiment 3
[0077] This embodiment is an apparatus embodiment, and is used to execute the method in the first embodiment above.
[0078] image 3 It is a schematic structural diagram of a vehicle-mounted IGBT state monitoring device provided in the third embodiment of the present invention; image 3 As shown, this embodiment provides a vehicle-mounted IGBT state monitoring device, which includes a data acquisition module 201, a degradation factor acquisition module 202, and a degradation state monitoring module 203.
[0079] Among them, the data acquisition module 201 is used to collect the operating condition information and end characteristic parameter data of the IGBT. The operating condition information includes the temperature, humidity and operating load of the IGBT; the end characteristic parameter data includes the saturation voltage drop and the conductance of the IGBT. Turn-on voltage, turn-on equivalent resistance, threshold voltage, gate current, turn-on time and turn-off time;
[00...
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