PMOS transistor driving circuit using active discharging technique and design method thereof

Abstract

The invention discloses a PMOS transistor driving circuit using an active discharging technique. The circuit includes an NPN type audion Q2, an NMOS transistor Q3, a Schottky diode D2, a capacitor C2,a resistor R1, a resistor R2, a resistor R3 and a resistor R4, wherein a grid electrode of the NMOS transistor Q3 is connected with one end of the resistor R3, and a drain electrode of the NMOS transistor Q3 is connected with one end of the resistor R2; a base electrode of the NPN type audion Q2 is connected with the drain electrode of the NMOS transistor Q3 through the capacitor C2, a collectorelectrode of the NPN type audion Q2 is connected with a source electrode of a PMOS transistor to be driven, and an emitting electrode of the NPN type audion Q2 is connected with the other end of the resistor R2 and a grid electrode of the PMOS transistor to be driven. The invention further discloses a design method of the PMOS transistor driving circuit using the active discharging technique. ThePMOS transistor driving circuit using the active discharging technique is convenient to achieve, low in cost, simple in design method process and capable of effectively ensuring fast connection and disconnection of the PMOS transistor.

Description

technical field [0001] The invention belongs to the technical field of switching power supplies, and in particular relates to a PMOS transistor drive circuit and a design method using active discharge technology. Background technique [0002] With the rapid development of the electronic market, the demand for switching power supply is increasing, and the requirements for switching power supply performance are also getting higher and higher. The fully controlled power transistor is one of the core parts of the switching power supply, and its operating status and safety directly affect the performance of the switching converter. Fully controlled power transistors can be divided into giant transistors (GTR), insulated gate bipolar transistors (IGBT), power field effect transistors (VDMOS), and gate turn-off thyristors (GTO). Since the power MOS transistor is the widest frequency band among fully controlled devices, it has been paid more attention in the process of high frequen...

AI Technical Summary

Problems solved by technology

However, when the Q1 tube is turned off, the gate-source parasitic capacitance must be discharged through the resistor R1, and the discharge speed is slow, and the drive circuit needs to control the alternate conduction of the Q1 tube and the Q2 tube, and two drive signals need to be set reasonably , the circuit structure is complex

Images