Metallization method of aluminum nitride ceramic plate

A technology of aluminum nitride ceramics and plate metal, which is applied in the field of ceramic metallization, can solve problems such as low yield rate and affect production quality, and achieve the effect of improving connection strength, product quality and yield rate, and product quality

Active Publication Date: 2021-01-01
FUJIAN HUAQING ELECTRONICS MATERIAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for metallizing aluminum nitride ceramic plates. The technical problem to be solved is: in the process of forming the TiCu metallurgical transition layer, it needs to be heated to 800-900°C. When it comes to production quality, the yield rate is low

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  • Metallization method of aluminum nitride ceramic plate

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Such as figure 1 Shown, the method for metallizing an aluminum nitride ceramic plate comprises the following steps:

[0028] Step S1: Cleaning the surface of the aluminum nitride ceramic plate, first cleaning the surface of the aluminum nitride ceramic plate with 10% hydrochloric acid, then cleaning with water, and drying after cleaning; plating on nitrogen by vacuum magnetron sputtering A titanium conductive layer with a set thickness is formed on the surface of the aluminum ceramic plate;

[0029] Step S2: The titanium-plated aluminum nitride ceramic plate is used as the cathode, and placed in an electrolytic cell filled with acidic copper sulfate plating solution, refined copper is used as the anode, and the formula of the acidic copper sulfate plating solution is: 150g / L CuSO 4 ·5H 2 O, 50g / L mass concentration is 98% concentrated H 2 SO 4 , the solvent is water; control the cathode current density 3A / dm 2 1. The temperature is 30°C, and the time is 30 minutes,...

Embodiment 2

[0035] Such as figure 1 Shown, the method for metallizing an aluminum nitride ceramic plate comprises the following steps:

[0036] Step S1: Cleaning the surface of the aluminum nitride ceramic plate, first cleaning the surface of the aluminum nitride ceramic plate with 10% hydrochloric acid, then cleaning with water, and drying after cleaning; plating on nitrogen by vacuum magnetron sputtering A titanium conductive layer with a set thickness is formed on the surface of the aluminum ceramic plate;

[0037] Step S2: The titanium-plated aluminum nitride ceramic plate is used as the cathode, and placed in an electrolytic cell filled with acidic copper sulfate plating solution, refined copper is used as the anode, and the formula of the acidic copper sulfate plating solution is: 180g / L CuSO 4 ·5H 2 O, 65g / L mass concentration is 98% concentrated H 2 SO 4 , the solvent is water; control the cathode current density 5A / dm 2 1. The temperature is 40°C, and the time is 20 minutes,...

Embodiment 3

[0043] Such as figure 1 Shown, the method for metallizing an aluminum nitride ceramic plate comprises the following steps:

[0044] Step S1: Cleaning the surface of the aluminum nitride ceramic plate, first cleaning the surface of the aluminum nitride ceramic plate with 10% hydrochloric acid, then cleaning with water, and drying after cleaning; plating on nitrogen by vacuum magnetron sputtering A titanium conductive layer with a set thickness is formed on the surface of the aluminum ceramic plate;

[0045] Step S2: The titanium-plated aluminum nitride ceramic plate is used as the cathode, and placed in an electrolytic cell filled with acidic copper sulfate plating solution, refined copper is used as the anode, and the formula of the acidic copper sulfate plating solution is: 220g / L CuSO 4 ·5H 2 O, 80g / L mass concentration is 98% concentrated H 2 SO 4 , the solvent is water; control the cathode current density 8A / dm 2 1. The temperature is 50°C, and the time is 10 minutes,...

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Abstract

The invention relates to an aluminum nitride ceramic plate metalization method, which comprises the following steps of cleaning the surface of an aluminum nitride ceramic plate; forming a titanium conduction layer with the set thickness on the surface of the aluminum nitride ceramic plate; using the aluminum nitride ceramic plate subjected to titanium plating on the surface as a cathode; putting the aluminum nitride ceramic plate into an electrolytic bath; using refined copper as an anode; putting the aluminum nitride ceramic plate into a heat treatment furnace; then, performing heating and temperature rise; seeping the titanium conducting layer to the aluminum nitride to form a TiN metallurgical transition layer and simple substance aluminum; continuously performing heating and temperature rise; sending ultrasonic waves to the aluminum nitride ceramic plate through a ultrasonic wave generating device, so that the liquid-state simple substance aluminum vibrates and flows out; stabilizing the TiN metallurgical transition layer; performing further heating and temperature rise; seeping the titanium conducting layer to the copper plating layer to form a TiCu metallurgical transition layer. Compared with the prior art, the method provided by the invention has the advantages that the liquid-state simple substance aluminum in the TiN metallurgical transition layer vibrates, so that the liquid-state simple substance aluminum melts and is discharged out of the aluminum nitride ceramic plate; the connection intensity of the copper plating layer and the titanium conducting layer is improved; the product quality and the finished product rate are improved.

Description

technical field [0001] The invention relates to the field of ceramic metallization, and relates to a method for metallizing an aluminum nitride ceramic plate. Background technique [0002] With the development of power electronic devices today, the new aluminum nitride ceramics (AlN) due to its good thermal conductivity (thermal conductivity can reach 150-300W / m K, which is 7 to 8 times that of alumina ceramics) and mechanical strength, no Toxic and side effects, as well as similar expansion coefficients with semiconductor materials such as silicon and germanium, have gradually replaced traditional packaging materials such as alumina and beryllium oxide ceramics. [0003] However, aluminum nitride ceramics are difficult to achieve direct connection with electronic chips, and the surface needs to be metallized, and metallization generally adopts the method of surface copper coating. The aluminum nitride ceramics coated with copper not only have good thermal conductivity of a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/90C23C28/02C23C14/35C23C14/18C23C14/58C25D3/38C25D5/50
Inventor 杨大胜施纯锡
Owner FUJIAN HUAQING ELECTRONICS MATERIAL TECH
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