Method and system for calculating orientation system structure factor in SAXS calculation

A technology of structure factor and architecture, applied in the calculation field of orientation architecture factor, can solve problems such as data analysis obstacles, interaction of scatterers cannot be ignored, complex calculation of structure factors, etc., and achieve good data support effect

Active Publication Date: 2018-01-16
SHENZHEN UNIV +1
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in most cases in material research, the scatterer density in the material belongs to a dense system. At this time, the interaction between scatterers cannot be ignored, and the calculation of its structure factor is very complicated, which brings great challenges to SAXS data analysis. obstacles

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and system for calculating orientation system structure factor in SAXS calculation
  • Method and system for calculating orientation system structure factor in SAXS calculation
  • Method and system for calculating orientation system structure factor in SAXS calculation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0114] For oriented dense scattering systems with small scatterer aspect ratio, set the parameter f v = 0.00005, get as Figure 5 The scattering intensity curve shown and as Image 6 Horizontal structure factor curve shown.

Embodiment 2

[0116] For oriented dense scattering systems with small scatterer aspect ratio, set the parameter f v = 0.0002, get as Figure 5 The scattering intensity curve shown and as Image 6 Horizontal structure factor curve shown.

Embodiment 3

[0118]For oriented dense scattering systems with small scatterer aspect ratio, set the parameter f v = 0.002, get as Figure 5 The scattering intensity curve shown and as Image 6 Horizontal structure factor curve shown.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for calculating an orientation system structure factor in SAXS calculation. The method comprises acquisition: acquiring length-diameter ratios of scatterers subjectedto SAXS synchrotron radiation light source irradiation, determination: determining structure factor calculation formulas of different scatterers according to the length-diameter ratios and calculation: respectively calculating structure factors of the different scatterers according to the different calculation formulas. The invention also relates to a system for calculating an orientation systemstructure factor in SAXS calculation. The method and system can acquire more precise structure factors of scatterers of the more dense orientation system and provide good data support for the non-destructive detection of the effectively observed material mesoscopic scale structure based on small-angle X-ray scattering SAXS.

Description

technical field [0001] The invention belongs to the field of small angle X-ray scattering (SAXS) theoretical calculation, and in particular relates to a calculation method and system for an orientation architecture factor in SAXS calculation. Background technique [0002] Small-angle X-ray scattering (SAXS) has been widely used as a non-destructive testing method for effectively observing the mesoscopic-scale structure of materials. The principle of its generation is that the inhomogeneous electron density within the sample within the range of one to several hundreds of nanometers causes the scattering phenomenon within a small angle range of the X-ray incident beam. SAXS can directly measure bulk materials, has good particle statistical average, and is widely used in chemistry, chemical industry, materials science, molecular biology, medicine, condensed matter physics and other disciplines. [0003] SAXS testing is simple, but data analysis is more complex. The data analy...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/203
Inventor 朱才镇海洋李冬至赵宁徐坚
Owner SHENZHEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap