A kind of array substrate and its manufacturing method

Abstract

The invention discloses an array substrate and a manufacturing method thereof. The manufacturing method includes the steps of: providing a first substrate; providing a first photomask, and setting an active switch on the first substrate; providing a second photomask, and setting an active switch on the first substrate. Photoresist, which includes the sequential process: the first wet etching of the active switch, the first ashing of the photoresist, the first dry etching of the active switch, and the second etching of the active switch The second wet etching, the second ashing treatment of the photoresist, the second dry etching of the active switch; the third photomask is provided to set the protective layer on the metal; the fourth photomask is provided to protect the The pixel electrode layer is arranged on the layer. The present invention reduces the edge length of the amorphous silicon layer and the ohmic contact layer in the active switch by adding the ashing process in the etching (2W2D: twice wet etching and twice dry etching), thereby reducing the possibility of leakage current of the display panel adverse effects caused.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate and a manufacturing method thereof. Background technique [0002] Existing displays are generally controlled based on active switches, which have many advantages such as thin body, power saving, and no radiation, and have been widely used, mainly including liquid crystal displays, OLED (Organic Light-Emitting Diode) displays, QLED (Quantum Dot Light Emitting Diodes) displays, plasma displays, etc. From the perspective of appearance and structure, there are both flat-panel displays and curved-surface displays. [0003] For liquid crystal displays, including two parts of the liquid crystal panel and the backlight module (Backlight Module), the working principle of the liquid crystal display is to place liquid crystal molecules in two parallel glass substrates, and apply a driving voltage on the two glass substrates to control the liquid crystal. The dir...

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Problems solved by technology

[0006] However, with the gradual development of displays in terms of ultra-large size, high driving frequency, and high resolution, the TFT structure is often an inverted staggered structure, that is, the bottom gate electrode and the source / drain are located on both sides of the a-Si layer. , so that the leakage current (leakage current) will be generated in the structural device because the AS tail is too long, which is neither safe nor energy-saving, and is not conducive to the normal operation of the device

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