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Driving method and driving device of a pixel detection circuit

A technology of detection circuit and driving method, which can be used in instrument, calculation, character and pattern recognition, etc., and can solve problems such as the influence of feed-through voltage detection accuracy

Active Publication Date: 2020-06-02
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Embodiments of the present invention provide a driving method and a driving device for a pixel detection circuit to solve the problem that the detection accuracy is affected by the feedthrough voltage generated when the switching transistor in the detection unit of the pixel detection circuit is turned on or off

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  • Driving method and driving device of a pixel detection circuit
  • Driving method and driving device of a pixel detection circuit
  • Driving method and driving device of a pixel detection circuit

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Embodiment Construction

[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0028] A driving method for a pixel detection circuit. Wherein, the above-mentioned pixel detection circuit 01 is as figure 1 As shown, it includes a plurality of detection units 10 defined by intersections of gate signal lines ( SEL1 , SEL2 . . . ) and read signal lines ( DL1 , DL2 . . . ).

[0029] The detection unit 10 includes a switch transistor Tc, the gate of the switch transistor Tc is connected to the above-mentioned gate signal line SE...

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Abstract

The embodiment of the invention provides a driving method and a driving device for a pixel detection circuit and relates to the field of display technology. Through the driving method and the drivingdevice, the problem that when switching transistors in detection units of the pixel detection circuit are switched on or off, generated feed-through voltage influences detection precision is solved. The pixel detection circuit comprises multiple detection units defined by gating signal lines and reading signal lines, wherein the detection units comprise the switching transistors, grid electrodes of the switching transistors are connected with the gating signal lines, and first electrodes of the switching transistors are connected with the reading signal lines. The driving method for the pixeldetection circuit comprises the steps that in two arbitrarily adjacent rows of gating signal lines, one row of gating signal line controls the switching transistor connected with the corresponding gating signal line to switch from an off state to an on state, and the other row of gating signal line controls the switching transistor connected with the corresponding gating signal line to switch froman on state to an off sate at the same moment. The driving method for the pixel detection circuit is used for driving the pixel detection circuit.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a driving method and a driving device for a pixel detection circuit. Background technique [0002] Pixel detection circuits are widely used in X-ray (Ray), fingerprint collection and other fields. Taking fingerprint collection as an example, each detection unit on the pixel detection circuit can identify the fingerprint according to the difference in the amount of light reflected by the ridges and valleys of the finger. [0003] The detection unit is provided with a switch transistor, and when the switch transistor is turned on, the detection unit can output the collected optical signal in the form of an electrical signal. However, when the switch transistor is turned on and off, an extra voltage, ie, a feedthrough voltage, will be generated at the source or drain of the switch transistor due to the influence of its own parasitic capacitance. The aforementioned feed-through vo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06K9/00
Inventor 郑智仁刘伟王鹏鹏丁小梁韩艳玲曹学友张平
Owner BOE TECH GRP CO LTD