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Resistive random access memory and manufacturing method thereof
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A technology of random access memory and manufacturing method, applied in the field of memory, can solve problems such as TiN or TaN falling off, and achieve the effect of increasing adhesion and preventing falling off
Inactive Publication Date: 2018-02-06
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
Since RRAM is usually inserted in the back-end-of-line (BEOL) of copperinterconnection, and the material of the metal electrode usually uses titaniumnitride (TiN) or tantalum nitride (TaN), technicians have found that when TiN or TaN is deposited on the dielectric TiN or TaN is prone to exfoliation when it is on the layer (the material is usually nitrogen-doped siliconcarbide (NDC) or black diamond (BD))
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Embodiment 1
[0051] Below, refer to Figures 2A-2G The detailed steps of an exemplary method of the manufacturing method of RRAM proposed by the present invention will be described. in Figure 2A-Figure 2G It is a cross-sectional view of a structure formed after each step of a manufacturing method of a resistive random access memory (RRAM) according to Embodiment 1 of the present invention is completed.
[0052] The manufacturing method of the RRAM provided in this embodiment specifically includes the following steps:
[0053] Step S0: Provide a substrate 200 with a structure such as Figure 2A shown.
[0054] The substrate 200 may be a silicon substrate, may be an IMD (inter-metal dielectric) of a semiconductor device, or may be a substrate of other materials. The embodiment of the present invention does not limit the shape, structure, material, etc. of the substrate 200 .
[0055]Step S1: forming a dielectric layer 210 on the substrate 200, the formed structure is as follows Figur...
Embodiment 2
[0073] Embodiment 2 of the present invention provides a resistive random access memory, which can be manufactured by using the manufacturing method described in Embodiment 1. Its specific structure is as follows:
[0076] a buffer layer 220 formed on the dielectric layer 210;
[0077] an opening 230 formed in the buffer layer 220 and the dielectric layer 210;
[0078] The lower electrode 240 is formed in the opening 230 .
[0079] Further, the RRAM also includes the following structures:
[0080] A resistive material layer 250 formed on the lower electrode 240;
[0081] The upper electrode 260 is formed on the resistive material layer 250 .
[0082] Wherein, the substrate may be a silicon substrate, may be an IMD (Inter-MetalDielectric Layer) of a semiconductor device, or may be a substrate of other materials.
[0083] Wherein, the material of the dielectric layer 210 may be nitrogen-doped ...
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Abstract
The present invention provides a manufacturing method of a resistive random access memory. The method comprises the following steps: providing a substrate; forming a dielectric layer on the substrate;forming a buffer layer on the dielectric layer; forming an opening in the dielectric layer and the buffer layer; and forming a bottom electrode in the opening. Besides, the present invention providesa resistive random access memory manufactured by employing the manufacturing method. According to the resistive random access memory and a manufacturing method thereof, a buffer layer is added between the dielectric layer and the electrode to increase degree of adhesion of the electrode and relieve high pressure so as to effectively prevent an electrode from falling.
Description
technical field [0001] The invention relates to the field of memory, in particular to a resistive random access memory and a manufacturing method thereof. Background technique [0002] In the field of memory, resistive random access memory (RRAM) is a new type of non-volatile storage technology with broad prospects. It is well compatible with logic processes and is easy to shrink (can be reduced to the order of 1nm). In recent years has caused a wide range of research and development upsurge. [0003] Existing RRAMs have always used a simple structure in which a resistive switch layer is inserted between two metal electrodes, that is, a metal-resistive switch layer-metal (MIM) structure. Since RRAM is usually inserted in the back-end-of-line (BEOL) of copperinterconnection, and the material of the metal electrode usually uses titaniumnitride (TiN) or tantalumnitride (TaN), technicians have found that when TiN or TaN is deposited on the dielectric TiN or TaN is prone to ...
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