Finite element modeling method for simulating failure short-circuit mechanism of pressing connection type IGBT device

Abstract

The invention relates to a finite element modeling method for simulating a failure short-circuit mechanism of a pressing connection type IGBT device and belongs to the field of large-power semiconductor device failure mechanisms and reliability research. The modeling method comprises the steps that a pressing connection type IGBT failure short-circuit process is simulated, a pressing connection type IGBT device equivalent model of a penetrating pit which is formed by a failure short circuit is built, and the content of aluminum element in the penetrating pit is set, so that the material attribute change of different failure short-circuit processes is formed; the pressing connection type IGBT device is subjected to modeling in a multi-physics field, a pressing connection type IGBT device geometric model is built, and based on the material attribute change of different failure short-circuit processes, the change rules of resistance and thermal resistance in different failure short-circuit processes are subjected to circulating simulation and analog. According to the finite element modeling method, finite element modeling and analysis in the failure short-circuit process of the pressing connection type IGBT device are achieved, a failure short-circuit equivalent model of the penetrating pit is considered, the change of characteristic parameters in the failure short-circuit processof the pressing connection type IGBT device is simulated, and the basis can be provided for failure short-circuit state monitoring of the pressing connection type IGBT device.

Description

technical field [0001] The invention belongs to the field of failure simulation of high-power semiconductor devices, and relates to a finite element modeling method for simulating the failure short circuit mechanism of a crimping type IGBT device. Background technique [0002] Compression-type IGBT devices are gradually replacing soldered IGBTs in flexible DC converter valves due to their advantages of double-sided heat dissipation and failure short-circuit. Process analysis is critical. The failure process method is analyzed through the short-circuit test experiment of the press-connected IGBT device. Due to the short-circuit failure time, it is difficult to analyze the parameters and performance changes of the entire failure short-circuit process; and the traditional multi-physics modeling method is not suitable for simulating its failure. Failure short circuit process and characteristic parameter changes. Therefore, based on the failure short-circuit mechanism of the pr...

AI Technical Summary

Problems solved by technology

But in fact, there is a change process from the failure of the IGBT device to the final short circuit. The aluminum coating on the IGBT chip is continuously integrated into the chip to form a penetration pit, which changes the characteristic parameters of the IGBT.

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