Finite element modeling method for simulating failure short-circuit mechanism of pressing connection type IGBT device

A modeling method and crimping technology, applied in the fields of instruments, electrical digital data processing, special data processing applications, etc., can solve problems such as changes in characteristic parameters of crimping IGBTs

Active Publication Date: 2018-02-09
CHONGQING UNIV
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Problems solved by technology

But in fact, there is a change process from the failure of the IGBT device to the final short circuit. The aluminum coating on th...

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  • Finite element modeling method for simulating failure short-circuit mechanism of pressing connection type IGBT device
  • Finite element modeling method for simulating failure short-circuit mechanism of pressing connection type IGBT device
  • Finite element modeling method for simulating failure short-circuit mechanism of pressing connection type IGBT device

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Embodiment Construction

[0043] The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0044] figure 1 It is a flowchart of the modeling method of the present invention, such as figure 1 As shown, the joint modeling method includes multi-physics modeling of press-fit IGBT devices and modeling of failure short-circuit seepage pits, where:

[0045] Press-connect IGBT simulates the failure short-circuit process modeling. According to the failure short-circuit mechanism of the press-connect IGBT device, the degradation model of the penetration pit on the surface of the IGBT chip is established, and the failure short-circuit process is simulated through the change of the conductivity of the penetration pit.

[0046] The specific process is: establish a failure short-circuit penetration pit model, and an IGBT chip failure short-circuit penetration pit equivalent model: calculate the different failure degrees of the penetration pit...

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Abstract

The invention relates to a finite element modeling method for simulating a failure short-circuit mechanism of a pressing connection type IGBT device and belongs to the field of large-power semiconductor device failure mechanisms and reliability research. The modeling method comprises the steps that a pressing connection type IGBT failure short-circuit process is simulated, a pressing connection type IGBT device equivalent model of a penetrating pit which is formed by a failure short circuit is built, and the content of aluminum element in the penetrating pit is set, so that the material attribute change of different failure short-circuit processes is formed; the pressing connection type IGBT device is subjected to modeling in a multi-physics field, a pressing connection type IGBT device geometric model is built, and based on the material attribute change of different failure short-circuit processes, the change rules of resistance and thermal resistance in different failure short-circuit processes are subjected to circulating simulation and analog. According to the finite element modeling method, finite element modeling and analysis in the failure short-circuit process of the pressing connection type IGBT device are achieved, a failure short-circuit equivalent model of the penetrating pit is considered, the change of characteristic parameters in the failure short-circuit processof the pressing connection type IGBT device is simulated, and the basis can be provided for failure short-circuit state monitoring of the pressing connection type IGBT device.

Description

technical field [0001] The invention belongs to the field of failure simulation of high-power semiconductor devices, and relates to a finite element modeling method for simulating the failure short circuit mechanism of a crimping type IGBT device. Background technique [0002] Compression-type IGBT devices are gradually replacing soldered IGBTs in flexible DC converter valves due to their advantages of double-sided heat dissipation and failure short-circuit. Process analysis is critical. The failure process method is analyzed through the short-circuit test experiment of the press-connected IGBT device. Due to the short-circuit failure time, it is difficult to analyze the parameters and performance changes of the entire failure short-circuit process; and the traditional multi-physics modeling method is not suitable for simulating its failure. Failure short circuit process and characteristic parameter changes. Therefore, based on the failure short-circuit mechanism of the pr...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/23
Inventor 李辉姚然赖伟任海李金元龙海洋李尧圣何蓓
Owner CHONGQING UNIV
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