Chemical vapor deposition coating device

A kind of technology of chemical vapor deposition, coating equipment

Active Publication Date: 2018-02-23
JIANGSU LEUVEN INSTR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

If one side of the substrate is closer to the top reactant gas delivery device than the other side of the substrate, the reactant gas flow between the two will be inclined, and the density of the plasma in this area will be uneven, resulting in uniformity of the substrate process. bad sex
Usually, the lifting devices of many substrate carrying devices use a mechanical method to make the upper surface of the substrate parallel to the intake device, but the adjustment method is difficult to ensure the parallelism, which includes mechanical parts Processing and assembly errors, etc., the accumulation of many errors will lead to a large deviation in parallelism, and these errors are unavoidable

Method used

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Embodiment Construction

[0054] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. It should be understood that the specific The examples are only used to explain the present invention, not to limit the present invention. The described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0055] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "horizontal", "vertical" etc. is based on the orientation or positional relatio...

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Abstract

The invention discloses a chemical vapor deposition coating device. The chemical vapor deposition coating device comprises a shell (10), a carrying table (20), a gas evenly-dividing disc (30), a lifting adjusting mechanism (40) and a horizontal adjusting mechanism (50). The shell comprises a vacuum cavity (11) with an opening in the lower end; the carrying table (20) is arranged in the vacuum cavity, the gas evenly-dividing disc (30) is arranged above the interior of the shell and is roughly parallel to the carrying table, the lifting adjusting mechanism (40) is arranged on the outer side of the bottom of the shell, one end of the horizontal adjusting mechanism (50) is connected to the carrying table, the other end of the horizontal adjusting mechanism (50) is connected to the lifting adjusting mechanism, and the horizontal adjusting mechanism and the lifting adjusting mechanism can cooperate with each other to adjust the position, in the horizontal direction and the vertical direction, of the carrying table at the same time. The chemical vapor deposition coating device can strictly control the precision in the vertical direction, errors brought by machining and mounting can be overcome in the horizontal direction, operation is convenient, and the adjusting space is large.

Description

technical field [0001] The invention relates to the technical field of material preparation, in particular to a chemical vapor deposition coating equipment. Background technique [0002] Chemical vapor deposition technology is a new type of material preparation method, which can be used to prepare various types of materials such as powder materials, bulk materials, new crystal materials, ceramic fibers, semiconductors and diamond films, and is widely used in aerospace Industrial special composite materials, atomic reactor materials, cutting tool materials, heat-resistant wear-resistant corrosion and biomedical materials and other fields. Compared with the traditional material preparation technology, chemical vapor deposition technology has many advantages. It can synthesize materials at a temperature far lower than the melting point of the material, and can control the elemental composition, crystal structure, and microscopic morphology of the synthesized material without si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/458C23C16/52
CPCC23C16/4581C23C16/52
Inventor 胡冬冬王铖熠李娜许开东
Owner JIANGSU LEUVEN INSTR CO LTD
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