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Shielded gate mosfet structure with improved withstand voltage and preparation method thereof

A shielded gate, voltage-resistant technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as process capability limitations, achieve process compatibility, improve voltage withstand capability, and optimize the effect of bottom doping

Active Publication Date: 2020-09-25
江苏芯长征微电子集团股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] For shielded gate MOSFET junctions, the withstand voltage is mainly borne by the thick oxygen pillars of the gate structure below the deep trench structure, but the limitation of process capability often limits the continued development in the direction of high voltage / ultra-high voltage

Method used

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  • Shielded gate mosfet structure with improved withstand voltage and preparation method thereof
  • Shielded gate mosfet structure with improved withstand voltage and preparation method thereof
  • Shielded gate mosfet structure with improved withstand voltage and preparation method thereof

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Embodiment Construction

[0052] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0053] Such as figure 1 with Figure 8 As shown: In order to further improve the withstand voltage capability of the MOSFET device, taking an N-type shielded gate MOSFET device as an example, the present invention includes at least one transistor unit, and the transistor unit includes an N+ substrate 201 and an N+ substrate located above the N+ substrate 201 N-type drift layer 203; a cell trench 213 is set in the N-type drift layer 203, and a shield gate structure is set in the cell trench 213; a P-type base area is set outside and above the side wall of the cell trench 213 209 and the N+ source region 210 located in the P-type base region 209;

[0054] At least one P-type island region 204 is disposed directly below the bottom of the cell trench 213, the P-type island region 204 is located in the N-type drift layer 203, and the P-type island adjacent to the ...

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Abstract

The invention relates to an MOSFET structure and a preparation method thereof, in particular to a shielding grid MOSFET structure for improving voltage resistance and a preparation method of the shielding grid MOSFET structure, and belongs to the technical field of semiconductor devices. A shielding grid structure is arranged in a cellular groove. One or more second conductive type island regionsare arranged in the groove bottom of the cellular groove and are successively vertically arranged. The second conductive type island region in the upmost end is in contact with the groove bottom of the cellular groove. According to the invention, by use of the second conductive type island regions and first conductive type auxiliary layers, the depth of the groove can be effectively increased; doping of the groove bottom of the cellular groove is optimized; voltage resisting ability of the MOSFET device can be further improved; and the structure is compatible with the current technique, safe and reliable.

Description

technical field [0001] The invention relates to a MOSFET structure and a preparation method thereof, in particular to a shielded gate MOSFET structure with improved withstand voltage and a preparation method thereof, belonging to the technical field of semiconductor devices. Background technique [0002] VDMOSFET (high-voltage power MOSFET) can reduce the on-resistance by reducing the thickness of the drain drift region. However, reducing the thickness of the drain drift region will lead to a decrease in the breakdown voltage of the device. Therefore, in VDMOSFET, it is necessary to improve the device The breakdown voltage of the device and the reduction of the on-resistance of the device are two contradictory aspects. The structure of the shielded gate MOSFET introduces two vertical polycrystalline field plates in the trench, which not only makes the device introduce two A new electric field peak increases the breakdown voltage of the device and forms a denser accumulation ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/423H01L21/336H01L29/78
CPCH01L29/4236H01L29/66734H01L29/7813
Inventor 徐承福朱阳军
Owner 江苏芯长征微电子集团股份有限公司
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