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Semi-superjunction MOSFET structure with improved voltage-withstanding performance and preparation method thereof

A semi-superjunction, voltage-resistant technology, applied in the field of semiconductor devices, can solve problems such as process capability limitations, and achieve the effects of low process capability, increased depth, and optimized trench bottom doping

Inactive Publication Date: 2018-05-29
福建晋润半导体技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] For semi-superjunction MOSFET junctions, the withstand voltage is mainly borne by the thick oxygen pillars of the gate structure below the deep trench structure, but the limitation of process capabilities often limits the continued development in the direction of high voltage / ultra-high voltage

Method used

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  • Semi-superjunction MOSFET structure with improved voltage-withstanding performance and preparation method thereof
  • Semi-superjunction MOSFET structure with improved voltage-withstanding performance and preparation method thereof
  • Semi-superjunction MOSFET structure with improved voltage-withstanding performance and preparation method thereof

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Embodiment Construction

[0049] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0050] As shown in the figure, a semi-superjunction MOSFET structure with improved withstand voltage includes at least one transistor unit, and the transistor unit includes a first conductivity type substrate and a first conductivity type substrate located above the first conductivity type substrate. Drift layer; a cell trench is arranged in the drift layer of the first conductivity type, and a shielding gate structure is arranged in the cell trench; a second conductivity type base region and a base region located on the side wall of the cell trench are arranged above and outside the first conductivity type drift layer. The source region of the first conductivity type in the base region of the second conductivity type; at least one island region of the second conductivity type is arranged directly below the bottom of the cell trench, and the island region of the...

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Abstract

The invention provides a semi-superjunction MOSFET structure with the improved voltage-withstanding performance and a preparation method thereof. The semi-superjunction MOSFET structure comprises at least one transistor unit including a first conduction type substrate and a first conduction type drift layer arranged above the first conduction type substrate; a cellular groove formed in the first conduction type drift layer and a shielding gate structure is arranged in the cellular groove; and one or more second conduction type island regions are arranged at the bottom of the cellular groove, wherein the second conduction type island regions are arranged successively and vertically and the second conduction type island region at the top is in contact with the bottom of the cellular groove.With the second conduction type island regions and a first conduction type auxiliary layer, the depth of the groove is increased effectively; the bottom doping of the cellular groove is optimized; andthe voltage-withstanding capability of the MOSFET device is enhanced. On the basis of the upper shielding gate structure, the conduction drop of the device is reduced. The design is compatible with the existing process; and the safety and reliability are high.

Description

technical field [0001] The invention relates to a MOSFET device, in particular to a semi-superjunction MOSFET structure with improved withstand voltage and a preparation method thereof, belonging to the technical field of semiconductor devices. Background technique [0002] VDMOSFET (high-voltage power MOSFET) can reduce the on-resistance by reducing the thickness of the drain drift region. However, reducing the thickness of the drain drift region will lead to a decrease in the breakdown voltage of the device. Therefore, in VDMOSFET, it is necessary to improve the device The breakdown voltage of the device and the reduction of the on-resistance of the device are two contradictory aspects. The semi-superjunction MOSFET structure adopts the introduction of two vertical polycrystalline field plates in the trench, which not only makes the device in the drift region. The two new electric field peaks increase the breakdown voltage of the device and form a denser accumulation layer...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/40H01L29/78H01L21/336
CPCH01L29/063H01L29/0684H01L29/407H01L29/66666H01L29/7827
Inventor 陈利张军亮姜帆刘玉山徐承福
Owner 福建晋润半导体技术有限公司
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