Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Radar sensor

A technology of radar sensor and photoelectric sensor, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., and can solve problems such as easy interference and high power consumption

Active Publication Date: 2018-02-23
深圳市雷克斯托通信有限公司
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the present invention proposes a semiconductor radar sensor with a shared structure, which solves the problems of easy interference and high power consumption in the field of electromagnetic medium propagation such as electronic tags, unmanned vehicles, and drones

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Radar sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and embodiments, which are preferred embodiments of the present invention. A semiconductor radar sensor with a common structure provided by the embodiment of the present invention can be applied to various scenarios in the field of intelligent identification technology of the Internet of Things, including but not limited to 2G GSM, 3G CDMA, 4G LTE / LTE-A, 5G eMBB Systems such as mobile communication, trunking communication, satellite communication, laser communication, optical fiber communication, digital TV, radio frequency identification, power carrier, unmanned vehicle, unmanned aerial vehicle, Internet of Things, radar, etc., are not particularly limited in the embodiments of the present invention.

[0027] Such as figure 1 As shown, the present invention proposes a semiconductor radar sensor with a shared structure. The radar sensor includes...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of a semiconductor integrated circuit, and particularly relates to a semiconductor radar sensor with a shared structure; and the radar sensor comprises a plurality of photoelectric sensors which are arranged into two-dimensional line and column arrangement in the perpendicular and horizontal directions, wherein each photoelectric sensor comprises two triodes, five N transistors and two P transistors. The radar sensor has the advantage of solving the problems of easy interference and high power consumption of an electronic tab, an unmanned vehicle, an unmanned aerial vehicle and the like which are based on the electromagnetic dielectric propagation field.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to a semiconductor radar sensor with a common structure. Background technique [0002] Radio frequency identification RFID systems are able to detect on a single tag identification unit, each of which can satisfactorily read various parameters over a wide range, but such as temperature and humidity, electromagnetic interference EMI, reader sensitivity, Material properties, and other consequent effects, reduce the reliability of the sensor. A good radio frequency identification RFID integrated circuit is a challenge to the manufacturing process and circuit design, because the radio frequency identification RFID integrated circuit requires extremely low power consumption, large dynamic range, etc. The long-distance reading and writing of radio frequency identification RFID needs to greatly increase the transmission power of the reader, resulting in increased...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/09
CPCH01L31/09
Inventor 李健胜朱玉珍
Owner 深圳市雷克斯托通信有限公司
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More