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System and method for characterizing critical parameters resulting from a semiconductor device fabrication process

A technology of manufacturing process and critical parameters, applied in semiconductor/solid-state device testing/measurement, measurement device, microstructure device, etc., which can solve problems such as complex capacitance measurement

Inactive Publication Date: 2018-03-06
NXP USA INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Capacitive measurements of these movable structures involve complex and sophisticated testing techniques and may involve comparisons with numerical analysis and simulations

Method used

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  • System and method for characterizing critical parameters resulting from a semiconductor device fabrication process
  • System and method for characterizing critical parameters resulting from a semiconductor device fabrication process
  • System and method for characterizing critical parameters resulting from a semiconductor device fabrication process

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Embodiment Construction

[0065] In general, embodiments disclosed herein relate to a process control monitoring system and a method for characterizing critical device parameters resulting from a semiconductor device fabrication process for A process control monitoring system and a plurality of semiconductor devices are formed. The process control monitoring system includes three related structures, but with different critical dimensions. The general configuration of each of the three structures consists of a single fixed "finger" of a given width and length etched into a structural layer of a given thickness. On each side of the finger there is a given spacing from the adjacent sidewall of the structural layer. Various electrical contacts are made to the fingers and adjacent sidewalls of the structural layer in order to obtain resistance measurements of the fingers and to measure the static differential capacitance between the fingers and the surrounding sidewalls. Resistance and capacitance measure...

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Abstract

The invention discloses a system and method for characterizing critical parameters resulting from a semiconductor device fabrication process. The system includes three related structures. A first structure includes a first finger interposed between a first pair of sidewalls. The first finger has a first length and a first width, and is separated from each of the sidewalls by a first gap having a first spacing. A second structure includes a second finger interposed between a second pair of sidewalls. The second finger has a second length and the first width, and is separated from each of the sidewalls by a second gap having a second spacing. A third structure includes a third finger interposed between a third pair of sidewalls. The third finger has the second length and a second width, andis separated from each of the sidewalls by a third gap having a second spacing. Resistance and capacitance measurements of the three structures are used to extract critical parameters resulting from asemiconductor device fabrication process.

Description

technical field [0001] The present invention generally relates to semiconductor device fabrication processes. More specifically, the present invention relates to a system and method for characterizing critical parameters of devices fabricated according to semiconductor device fabrication processes. Background technique [0002] Microelectromechanical systems (MEMS) technology provides a means for fabricating extremely small mechanical structures and integrating these structures with electrical devices on a single substrate using conventional bulk semiconductor processing techniques. A common application of MEMS is the design and fabrication of sensor devices. MEMS sensor devices are widely used in applications such as automobiles, inertial guidance systems, home appliances, gaming devices, protection systems for various devices, and many other industrial, scientific and engineering systems. [0003] Conventional MEMS fabrication processes typically employ thick blocks (i.e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C99/00
CPCB81C99/004H01L22/34H01L22/12H01L22/14G01R27/2605G01R31/2858B81C99/0065G01R27/02H01L22/20H01L22/30
Inventor 佩奇·M·霍尔姆柳连俊
Owner NXP USA INC