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Display panel and display device

A display panel and silicon monoxide technology, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of poor definition of gray scales of organic light-emitting display panels, adjustment of screen brightness gray scales, and disadvantages.

Active Publication Date: 2018-03-06
SHANGHAI TIANMA MICRO ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the sub-threshold swing of the driving transistor is small, the gray scale of the organic light-emitting display panel will not be well defined, so it is not conducive to the driving transistor to adjust the gray scale of screen brightness.

Method used

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Embodiment Construction

[0022] In order to better understand the technical solutions of the present invention, the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0023] It should be clear that the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0024] Terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. As used in the embodiments of the present invention and the appended claims, the singular forms "a", "said" and "the" are also intended to include the plural forms unless the context clearly indicates otherwise.

[0025] It should be understood that the term "an...

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Abstract

The invention provides a display panel and a display device, and relates to the technical field of display. The display substrate comprises a switch transistor and a drive transistor. The switch transistor and the drive transistor comprise active layers which comprise a first active layer in the switch transistor and a second active layer in the drive transistor gate insulating layers which are disposed on the active layers and comprise a first gate insulating layer in the switch transistor and a second gate insulating layer in the drive transistor. The first gate insulating layer comprises afirst silicon nitride layer and a first silicon oxide layer. The second gate insulating layer just comprises a second silicon oxide layer, and the thickness of the second silicon oxide layer is greater than the thickness of the first silicon oxide layer; or the second gate insulating layer comprises a second silicon nitride layer and a second silicon oxide layer, wherein the thickness of the second silicon oxide layer is greater than the thickness of the first silicon oxide layer, and the thickness of the second silicon nitride layer is less than the thickness of the first silicon nitride layer. The display panel can meet the quick start demands of the switch transistor while achieving the better definition of gray scale.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a display panel and a display device. Background technique [0002] Currently, a display panel using Low Temperature Poly-silicon (LTPS) technology includes a plurality of thin film transistors. According to the functions of the thin film transistors in the circuit, the types of thin film transistors include driving transistors, switching transistors and other types. thin film transistor. In the prior art, both the driving transistor and the switching transistor include a gate insulating layer, the gate insulating layers of the driving transistor and the switching transistor are formed at the same time, and the film settings of the gate insulating layers of the driving transistor and the switching transistor are basically the same, Thus, the subthreshold swing of the driving transistor is similar to that of the switching transistor. The subthreshold swing refers to an ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12
CPCH01L27/1214H01L27/1237
Inventor 龚华
Owner SHANGHAI TIANMA MICRO ELECTRONICS CO LTD
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