Semiconductor structure forming method
A semiconductor and isolation structure technology, applied in the field of semiconductor structure formation, can solve the problems affecting the performance of fin field effect transistors and increasing the difficulty of the process, so as to reduce the impact, improve the performance and reduce the possible effects of damage
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[0032] It can be known from the background technology that the fin field effect transistor in the prior art has performance problems. Now combine the formation process of fin-type field effect transistors to analyze the causes of performance problems:
[0033] As the size of semiconductor devices shrinks and the size of transistors shrinks, the distance between adjacent fin field effect transistors also shrinks. The stress layers of adjacent fin-type field effect transistors are prone to merge, which causes bridging between the source and drain regions of the adjacent fin-type field effect transistors. In order to prevent the bridging between the source and drain regions of adjacent fin-type field effect transistors, the prior art introduces a single diffusion break (SDB) structure.
[0034] reference Figure 1 to Figure 7 , Shows a schematic diagram of a cross-sectional structure corresponding to each step of a semiconductor structure forming method.
[0035] reference figure 1 wi...
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