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Method for ultra-rapidly preparing Ag<2>X bulk thermoelectric materials

A thermoelectric material, an ultra-fast technology, applied in the direction of binary selenium/tellurium compounds, etc., can solve the problems of time-consuming and energy-consuming, difficult to precisely control the composition, strict equipment requirements, etc., achieve ultra-short preparation time, reduce energy consumption, superior performance effect

Active Publication Date: 2018-03-13
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Currently, compound Ag 2 Se, Ag 2 The synthesis methods of Te mainly focus on hydrothermal method, solvothermal method, etc., which prepare Ag in solution. 2 Se, Ag 2 Te's method often requires complex reaction process and strict reaction conditions
What's more regrettable is that some toxic chemical reagents need to be used, which consumes time and energy and pollutes the environment
However, the conventional long-term high-temperature melting method and high-temperature solid-state reaction method have strict requirements on equipment, consume energy, and easily cause the absence of Se or Te, making it difficult to precisely control the composition.

Method used

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  • Method for ultra-rapidly preparing Ag&lt;2&gt;X bulk thermoelectric materials

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Experimental program
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Effect test

Embodiment 1

[0027] An ultrafast preparation of Ag 2 X(Ag 2 Se) the method of bulk thermoelectric material (pulse current is respectively set to 30A, 50A and 100A), concrete steps are as follows:

[0028] 1) Using Ag powder and Se powder as raw materials, weigh Ag powder and Se powder according to the molar ratio of 2:1, a total of 3 groups, 5g in each group, respectively numbered A1, B1, and C1;

[0029] 2) Put each raw material in an agate mortar and pre-mix it with a medicine spoon for 7 minutes to obtain a mixed powder (mixed raw material);

[0030] 3) Put the mixed powders (A1, B1, C1) into Φ16mm graphite molds for compaction, and then put the graphite molds into the plasma activation sintering (PAS) equipment to activate for 30s (plasma activation stage) to prepare the product A1, B1, C1 (Ag 2 Se bulk thermoelectric material); the parameters of the plasma activation stage are set as follows: the vacuum condition below 10Pa, the axial pressure is 14MPa, the pulse voltage is 2V, the...

Embodiment 2

[0033] An ultrafast preparation of Ag 2 The method of Se bulk thermoelectric material (pulse voltage is set to 1V, 2V and 3V respectively), specific steps are as follows:

[0034] 1) Using Ag powder and Se powder as raw materials, weigh Ag powder and Se powder according to the molar ratio of 2:1, a total of 3 groups, 5g in each group, respectively numbered A2, B2, and C2;

[0035] 2) Put each raw material in an agate mortar and pre-mix it with a medicine spoon for 7 minutes to obtain a mixed powder (mixed raw material);

[0036]3) Put the mixed powders (A2, B2, C2) into Φ16mm graphite molds for compaction, and then put the graphite molds into the plasma activation sintering (PAS) equipment to activate for 30s (plasma activation stage) to prepare the product A2, B2, C2 (Ag 2 Se bulk thermoelectric material); among them, the parameters of the plasma activation stage are set as follows: the vacuum condition below 10Pa, the axial pressure is 20MPa, the pulse current is 50A, the ...

Embodiment 3

[0039] An ultrafast preparation of Ag 2 The method of Se bulk thermoelectric material (ON / OFF pulse time is set to 30ms, 100ms and 200ms respectively), the specific steps are as follows:

[0040] 1) Using Ag powder and Se powder as raw materials, weigh Ag powder and Se powder according to the molar ratio of 2:1, a total of 3 groups, each group 5g, respectively numbered A3, B3, C3;

[0041] 2) Put each group of raw materials in an agate mortar and pre-mix them with a medicine spoon for 7 minutes to obtain a mixed powder (mixed raw materials);

[0042] 3) Put the mixed powders (A3, B3, C3) into Φ16mm graphite molds for compaction, and then put the graphite molds into the plasma activation sintering (PAS) equipment to activate for 30s (plasma activation stage) to prepare the product A3, B3, C3 (Ag 2 Se bulk thermoelectric material); the parameters of the plasma activation stage are set as follows: the vacuum condition below 10Pa, the axial pressure is 30MPa, the pulse current i...

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Abstract

The invention discloses a method for ultra-rapidly preparing Ag<2>X (X=Se, Te) bulk thermoelectric materials for the first time. The method uses Ag powder and Se or Te powder as raw materials, firstly, the raw materials are simply mixed uniformly, the obtained mixed raw materials are loaded in a graphite mould, the mould is placed into plasma activation sintering equipment, the densified Ag<2>X bulk thermoelectric materials are prepared in a plasma activation stage of a plasma activation sintering process, and the reaction synthesis and densification process of the Ag<2>X compounds are completed in one step. The process involved in the method provided by the invention is ultra-simple, the preparation time is ultra-short, and the prepared Ag<2>X bulk thermoelectric materials have excellentperformance, and lay a good foundation for large-scale preparation and large-scale application of the Ag<2>X compounds.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric material preparation, in particular to an ultra-fast preparation of Ag 2 X. Approaches to bulk thermoelectric materials. Background technique [0002] Ag 2 X(X=Se,Te) compounds are a kind of extremely important semiconductor materials, which have many peculiar electrical and optical properties, so they have potential application prospects. [0003] Ag 2 Se has two stable solid phases, a low-temperature tetragonal phase (β) and a high-temperature cubic phase (α), and the β-α phase transition temperature is about 407K. β-Ag 2 Se is an n-type semiconductor with a band gap of about 0.07eV at 0K. Ag 2 Te also has two stable solid phases, low-temperature monoclinic phase (β) and high-temperature cubic phase (α), and the β-α transition temperature is about 420K. β-Ag 2 Te is an n-type semiconductor with a forbidden band width of ≤0.2eV at 0K. As a new type of three-dimensional topological...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04
CPCC01B19/04C01P2002/72
Inventor 唐新峰杨东旺唐贤贤苏贤礼鄢永高
Owner WUHAN UNIV OF TECH
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