Crystal pulling furnace
A crystal pulling furnace and seed crystal technology, applied in the field of crystal pulling furnaces, can solve problems such as poor crystal quality, achieve the effects of improving temperature differences, improving quality, and reducing heat loss
Inactive Publication Date: 2018-04-06
ZING SEMICON CORP
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- Abstract
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- Application Information
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Problems solved by technology
[0007] The object of the present invention is to provide a crystal pulling furnace to solve the problem that the quality of the initially formed crystal near the crystal crown is poor when the existing crystal pulling furnace is forming the ingot
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[0044] Aiming at the problem in the background that the initially formed crystal near the crystal crown does not meet the quality requirements, the inventors of the present application have found after many studies that it is precisely because of the existing crystal pulling furnace and the quality of the formed silicon ingot. Structural characteristics, which in turn lead to the fact that crystals grown close to the crown are prone to defects.
[0045] specific reference Figure 1b and Figure 1c As shown, in the initial stage of crystal growth, the formed crystal is exposed from the opening of the heat shield 14, and the molten silicon material also produces a large heat loss, thus causing the formed crystal surface and the melting The silicon material produces large temperature fluctuations, which in turn causes a large number of defects in the formed crystals; and as the crystals continue to grow, the formed crystals are pulled out from the opening of the heat shield 14, ...
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Abstract
The invention provides a crystal pulling furnace which comprises a crucible, a seed chuck and a heat shield, wherein the crucible is used for containing fused silica; the seed chuck can move up and down above the crucible; the heat shield is positioned above the crucible and has an opening; the maximum section size of the seed chuck in a direction perpendicular to the moving direction is 0.8-1.2 times that of the maximum section size of a formed crystal bar in the same direction. According to the crystal pulling furnace provided by the invention, since the size of the seed chuck for retainingthe seed crystal and the crystal size of the formed crystal bar have small difference, an area of the formed crystal exposed via the opening of the heat shield can be decreased at an initial growth stage of the crystal, lots of dissipated heat can be further effectively suppressed, and formation of defects in a formed crystal crown and a crystal close to the crystal crown can be suppressed.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a crystal pulling furnace. Background technique [0002] Crystal rods are raw silicon materials used to manufacture many electronic components, and the crystal rods are usually made by using crystal pulling furnaces. Figure 1a It is a structural schematic diagram of an existing crystal pulling furnace, such as Figure 1a As shown, the crystal pulling furnace includes: a crucible 11 for accommodating molten silicon material, a seed crystal chuck 12 for clamping seed crystal 13, a heat loss tool for reducing the heat loss of the molten silicon material Heat screen14. [0003] The following reference Figure 1a - Figure 1c The schematic diagram of the structure of the crystal pulling furnace during the crystal growth process is shown, explaining the process of growing crystal ingots using the existing crystal pulling furnace. [0004] First, refer to Figure ...
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IPC IPC(8): C30B15/32C30B15/10C30B29/06
CPCC30B15/10C30B15/32C30B29/06
Inventor 张汝京肖德元
Owner ZING SEMICON CORP