Memory device, manufacturing method thereof and electronic device comprising memory device

Abstract

The invention discloses a memory device, a manufacturing method thereof and an electronic device comprising the memory device. According to an embodiment, the memory device may include a plurality offirst columnar active regions, a plurality of second columnar active regions, a plurality of layers of first memory gate stacks and a plurality of layers of second memory gate stacks; the first columnar active regions and the plurality of second columnar active regions are formed on a substrate and extend upwardly; the first columnar active regions and the plurality of second columnar active regions are respectively arranged as a first array and a second array; each first columnar active region includes source / drain layers and channel layers which are alternately stacked; corresponding channellayers in the first columnar active regions are substantially coplanar; corresponding source / drain layers in the first columnar active regions are substantially coplanar; each second columnar activeregion includes an integrally-extending active semiconductor layer; the plurality of layers of first memory gate stacks are substantially coplanar with the channel layers; the plurality of layers of first memory gate stacks surround the peripheries of the channel layers on corresponding planes respectively; and the plurality of layers of second memory gate stacks surround the peripheries of the second columnar active regions respectively.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a storage device based on a vertical type device, a manufacturing method thereof, and an electronic device including the storage device. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the horizontal type device cannot be easily further scaled down. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, vertical devices are easier to scale down than horizontal devices. [0003] However, for vertical devices, it is difficult to control the gate length, especially for single crystal channel materials. On the other hand, if a polycrystalline channel mat...

AI Technical Summary

Problems solved by technology

[0003] However, for vertical devices, it is difficult to control the gate length, especially for single crystal channel materials

On the other hand, if a polycrystalline channel material is used, the channel resistance is greatly increased compared to single crystal material, making it difficult to stack multiple vertical devices, as this would result in an excessively high resistance

Images