Wafer surface appearance control system and control method

Abstract

The invention provides a wafer surface appearance control system and control method. The wafer surface appearance control method comprises the following steps of 1) providing a wafer; 2) performing chemical mechanical polishing on the surface of the wafer; 3) setting etching time according to removal conditions in different regions of the wafer surface in the chemical mechanical polishing process;and 4) performing etching on different regions of the wafer surface according to the etching time. The wet etching time for the wafer is set according to the removal conditions in different regions of the wafer surface in the chemical mechanical polishing process, and the appearance deviation of the wafer surface caused in the chemical mechanical polishing process in the wet etching process can be compensated, so that the wet etched wafer has high surface appearance, the wafer surface appearance is effectively controlled within the reasonable technological specifications, and generation of defects in the subsequent process can be avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a wafer surface topography control system and control method. Background technique [0002] The chemical mechanical polishing (CMP) process is a very important process in the semiconductor field at present, and it is widely used to correct the flatness of the wafer surface. However, after the wafer is chemically mechanically polished, there will be certain changes in the surface of the wafer, such as figure 1 As shown, the thickness of different regions on the wafer surface will vary. In the follow-up wet etching process, the existing method adopted is to spray etching liquid in the wafer with constant wet etching process parameters (for example, the etching time of different regions of the wafer, etc.). The surface of the wafer is etched, and the process parameters of wet etching are not automatically adjusted according to the wafer morphology after chemical mechanical ...

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Problems solved by technology

[0003] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a wafer surface topography control system and control method, which are used to solve the problem that the wet etching process after chemical mechanical polishing in the prior art cannot be based on chemical The wafer morphology after mechanical polishing automatically adjusts the wet etching process parameters. After the wafer is wet etched, it is easy to cause the morphology of the wafer surface to change beyond the process specifications, resulting in defects during wafer exposure and other processes. question

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