Organic thin film transistor element and method of making the same

Abstract

An organic thin film transistor element and its manufacturing method. The organic thin film transistor element includes: a base material, a drain electrode, a source electrode, a barrier layer, an organic semiconductor layer, a gate dielectric layer and a gate electrode. The source electrode is located on the substrate and has a first vertical wall. The drain is located on the substrate and has second vertical walls facing the first vertical walls and isolated from each other. The barrier layer is located between the first vertical wall and the second vertical wall, and the width of the top surface of the barrier layer is substantially equal to the distance between the first vertical wall and the second vertical wall. The organic semiconductor layer covers the source electrode, the drain electrode and the barrier layer. The gate dielectric layer is on the organic semiconductor layer. The gate is located on the gate dielectric layer and electrically isolated from the organic semiconductor layer by the gate dielectric layer.

Description

technical field [0001] The invention relates to a thin film transistor element and a manufacturing method thereof. In particular, it relates to an organic thin film transistor element and a manufacturing method thereof. Background technique [0002] Thin-film transistor elements have been widely used in the field of liquid crystal displays. With the development of displays towards lighter, thinner, and flexible targets, organic thin-film transistors (Organic Thin Film) that use organic materials as the channel layer of field-effect transistors Transistor, OTFT), due to its low process temperature (<200°C), low cost and suitable for flexible substrates (eg, plastic substrates), has gradually attracted attention. [0003] Generally speaking, organic thin film transistors can be mainly divided into two types: top-contact (TC) structure and bottom-contact (BC) structure. A typical formation method of the upper contact structure is to firstly deposit an organic semiconductor...

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Problems solved by technology

[0004] However, when using a bottom-contact structure process to fabricate an organic thin film transistor element, the organic semiconductor layer deposited above the source / drain will have a height difference of ups and downs as the thickness of the source / drain pattern changes, making Uneven thickness of the organic semiconductor layer

Especially at the corner (coner) of the source / drain pattern, the thickness of the organic semiconductor layer will be thinner than the thickness above the source / drain, which will result in a channel length (channel length) of the organic thin film transistor device. length) produces non-uniform problems, seriously affecting the device performance of organic thin film transistor devices

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