Semiconductor structure and method of forming the same

Abstract

The invention provides a semiconductor structure and a forming method thereof. The method comprises the steps that a substrate having a fin part is provided; an initial groove is formed in the fin part and penetrates through the fin part along the extension direction vertical to the fin part; a separating layer and a separating groove disposed in the separating layer are formed in the initial groove, wherein the top part surface of the separating layer is lower than that of the fin part, and a part of the initial groove, higher than the top of the separating layer, is formed with a separatinggroove. The sidewall of the fin part of the separating groove is enlarged, and thereby the size of the separating groove can be enlarged along the extension direction of the fin part. After the enlargement processing, the separating layer is formed with an alternative grid structure. The sidewall of the separating groove is vertical to the top part of the fin part, which prevents the bottom part of the alternative grid structure from contacting with the sidewall of the separating groove, and effectively prevents adjacent source leakage doped zones from electric leakage due to bridging. The forming method can improve the performance of the formed semiconductor structure.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] As the integration level of semiconductor devices increases, the critical dimensions of transistors continue to shrink. However, as the size of the transistor decreases sharply, the thickness of the gate dielectric layer and the operating voltage cannot be changed accordingly, which makes it more difficult to suppress the short channel effect and increases the channel leakage current of the transistor. [0003] The gate of the Fin Field-Effect Transistor (FinFET) has a forked 3D structure similar to a fish fin. The channel of the FinFET protrudes from the surface of the substrate to form a fin, and the gate covers the top surface and sidewall of the fin, so that the inversion layer is formed on each side of the channel, and the connection of the circuit can be controlled on ...

AI Technical Summary

Problems solved by technology

[0005] However, leakage between the source and drain doped regions of existing adjacent fin field effect transistors is still prone to occur.

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