Method for accurately controlling overall morphology and performance of shallow trench isolation

Abstract

The present invention provides a method for accurately controlling overall morphology and the performance of shallow trench isolation. An optical line width measurement instrument is used to detect and quantify three-dimensional topography parameters and especially three-dimensional lumbar topography parameters of shallow groove etching under different light transmittances, thus a light transmittance interval suitable for an etching menu is defined according to the three-dimensional topography parameters and especially three-dimensional lumbar topography parameters of the shallow groove etching so as to accurately control the overall topography and performance of the shallow trench isolation. According to the method, the defects of a low precision and a long period of groove morphology after slicing monitor etching can be overcome, the disadvantage that a scanning electron microscope can only measure a line width and can not measure the topography of a shallow groove can be overcome, the defect that the accurate feedback of the actual information of the shallow groove topography can not be achieved can be overcome, and the shallow trench isolation development efficiency and productyield can be improved.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for precisely controlling the overall shape and performance of shallow trench isolation. Background technique [0002] As the size of semiconductor devices decreases, the critical dimensions of shallow trench isolation are more and more sensitive to the electrical impact of the device and the final yield. In the semiconductor device process technology of 65nm and below, in order to improve circuit performance and obtain higher semiconductor device density, shallow trench isolation technology is used and developed. The critical dimension of the trench has an extremely important impact on device electrical and yield. . With the reduction of critical dimensions of semiconductor devices, the morphology of shallow trench isolation is more and more sensitive to the electrical impact of the device, and may even produce sudden changes beyond the specifications, such as ...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method for accurately controlling the overall morphology and performance of shallow trench isolation, which can overcome the shortcomings of low accuracy and long period of trench morphology after slice monitoring and etching, and It can overcome the disadvantages that the scanning electron microscope can only measure the line width but cannot measure the shallow trench morphology, and can not accurately feed back the actual information of the shallow trench morphology, and can improve the development efficiency and product yield of shallow trench isolation

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