Unlock instant, AI-driven research and patent intelligence for your innovation.

A comparator including a magnetic tunnel junction (MTJ) device and a transistor

A magnetic tunnel junction and transistor technology, applied in the field of comparators, can solve problems such as the inability to tune the transition point

Inactive Publication Date: 2018-05-08
QUALCOMM INC
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, a user of a Schmitt trigger or a device that includes a Schmitt trigger may not be able to tune the transition point (or threshold voltage) of the Schmitt trigger during operation.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A comparator including a magnetic tunnel junction (MTJ) device and a transistor
  • A comparator including a magnetic tunnel junction (MTJ) device and a transistor
  • A comparator including a magnetic tunnel junction (MTJ) device and a transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Reference figure 1 , A particularly illustrative embodiment of the device is disclosed and is generally labeled 100. The device 100 includes a comparator 130. The comparator 130 may be external to the memory component of the device 100. The comparator 130 may be coupled to a capacitor, a diode bridge circuit, a second comparator, or a combination thereof.

[0022] The comparator 130 may have an input terminal (Vin) 104 and an output terminal (Vout) 108. The comparator 130 may be configured to compare the voltage 128 applied to the input 104 with one or more threshold voltage levels, as described herein. The input 104 may be coupled to a voltage source 150 (for example, a variable power supply). The comparator 130 includes a magnetic tunnel junction (MTJ) device 102 coupled to a transistor 120, such as a metal oxide semiconductor (MOS) transistor or a bipolar junction transistor (BJT). The input terminal 104 may be the input terminal of the MTJ device 102. The first o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A particular apparatus (100) includes a magnetic tunnel junction (MTJ) device (102) and a transistor (120). The MTJ device and the transistor are included in a comparator that has a hysteresis property associated with multiple transition points that correspond to magnetic switching points of the MTJ device.

Description

[0001] Priority claim [0002] This application claims the priority of U.S. Non-Provisional Patent Application No. 14 / 824,460 filed on August 12, 2015, the full text of which is incorporated herein by reference. Technical field [0003] The present disclosure generally relates to a comparator including a magnetic tunnel junction (MJT) device and a transistor. Background technique [0004] Advances in technology have led to smaller and more powerful computing devices. For example, various portable personal computing devices including phones (such as mobile and smart phones), tablets, and laptop computers are small, lightweight, and easy to carry by users. These devices can send voice and data packets through wireless network communication. Further, many of these devices include additional functions such as digital cameras, digital video cameras, digital audio recorders, and audio file players. In addition, such devices can process executable instructions, including software applic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K3/012H03K3/3565H03K3/45H03K5/24
CPCH03K3/012H03K3/3565H03K3/45H03K3/455H03K5/2409H03K5/2472
Inventor J·卡恩M·拉斯托基李康弘康相赫
Owner QUALCOMM INC