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Three-dimensional superconducting electrode material phase change memory manufacturing method

A phase-change memory and electrode material technology, applied in the direction of electrical components, etc., can solve the problems that phase-change memory technology is difficult to apply and the number of storage unit layers is small, so as to improve integration density and storage capacity, easy manufacturing process, and preparation The effect of convenient process

Active Publication Date: 2018-05-15
SHANGHAI XINCHU INTEGRATED CIRCUIT
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Due to the technical bottleneck of phase change materials in the existing phase change memory technology, the number of memory cell layers stacked for phase change memory in the three-dimensional structure is small, and the phase change memory technology based on the three-dimensional structure is difficult to be applied

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  • Three-dimensional superconducting electrode material phase change memory manufacturing method
  • Three-dimensional superconducting electrode material phase change memory manufacturing method
  • Three-dimensional superconducting electrode material phase change memory manufacturing method

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Embodiment Construction

[0045] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0046] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0047] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0048] In a preferred embodiment of the present invention, according to figure 1 Shown, a kind of preparation m...

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Abstract

The invention discloses a three-dimensional superconducting electrode material phase change memory manufacturing method. the superconducting material is adopted as the electrode material of a phase change memory cell, the operating current of the phase change memory cell at a critical temperature can be reduced, superposition of multiple layers of memory cells can be realized, and the integrationdensity and the storage capacity of the phase change memory are improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a preparation method of a three-dimensional superconducting electrode material phase-change memory. Background technique [0002] With the development of the electronic industry, people's demand for high-performance storage devices is also increasing. Phase change memory technology is considered to be the most mature memory in the new generation of memory. Phase change memory is a non-volatile memory device with large storage capacity, stronger durability and fast read and write speed. With the continuous advancement of integrated circuit technology nodes, the requirements for integration density and storage performance are getting higher and higher, and phase change memory can also play a key role in the field of low-temperature superconductivity. [0003] Due to the technical bottleneck of phase change materials in the existing phase change memory technology, the num...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/011
Inventor 王本艳景蔚亮陈邦明
Owner SHANGHAI XINCHU INTEGRATED CIRCUIT
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