A Remedial Method for Lost Ion Implantation Wafer Recordings

Abstract

The invention provides a remedy method for lost ion implanted wafer records, which is applied in the ion implantation process and includes the following steps: obtaining the ratio between the current ion implantation amount of the problematic wafer and the second detection value; providing a test Wafer, implant ions on the test wafer according to the ratio to form a test wafer equivalent to the problem wafer; terminate the implantation of the test wafer, and the ion implantation equipment forms a new wafer according to the ion implantation process to the test wafer Wafer implantation record: The ion implantation equipment performs ion implantation on the problematic wafer according to the new wafer implantation record, and finally completes the ion implantation of the problematic wafer. The beneficial effect of the technical solution is that it overcomes the problem in the prior art that when the ion implantation equipment fails abnormally (such as system software necrosis), the ion equipment cannot obtain the implantation record about the problematic wafer, that is, the problem of obtaining a remedy for the problematic wafer.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a remedy method for lost ion implantation wafer recording. Background technique [0002] The ion implantation process refers to the process of injecting ion beams accelerated to a certain high energy into the surface layer of solid materials to change the physical and chemical properties of the surface layer. During the ion implantation process of semiconductor wafers, it is often encountered that the ion implantation equipment fails, resulting in some wafers not completing all the implantation processes and requiring manual remediation. However, for the existing ion implantation equipment, for the partial implantation of the wafer caused by the abnormal alarm of the general equipment, the ion implantation equipment will have the implantation record of the wafer, and will generate a remedial program at the same time. The ion implantation equipment only needs to ...

AI Technical Summary

Problems solved by technology

During the ion implantation process of semiconductor wafers, it is often encountered that the ion implantation equipment fails, resulting in some wafers not completing all the implantation processes, which need to be manually remedied

However, for the existing ion implantation equipment, for the partial implantation of the wafer caused by the abnormal alarm of the general equipment, the ion implantation equipment will have the implantation record of the wafer, and will generate a remedial program at the same time. The ion implantation equipment only needs to run this remedial The program can complete all the implantation of the problematic wafers, but if the ion implanter has some faults (such as system software necrosis), there will be no implantation records of the problematic wafers on the machine, and a remedial program will not be generated, which will seriously affect Injection efficiency degrades final injected product yield

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