Clamping device and crystal processing equipment

Abstract

The invention provides a clamping device. The clamping device comprises a first clamping part, a second clamping part and a fixing and limiting ring; the first clamping part and the second clamping part are used for clamping a crystal in a manner of separately and correspondingly clamping the upper surface and the lower surface of the crystal; one end face of the fixing and limiting ring is provided with an adhesive which is used for adhering and fixing the crystal and defining a preset region on the upper surface or the lower surface of the crystal through the outer contour of the crystal; the preset region is not larger than an actual required region; the outer contour shape of the first clamping part is the same as the inner contour shape of the fixing and limiting ring; the fixing andlimiting ring is detachably attached to and sleeves the outer sidewall of the first clamping part and is concentric to the first clamping part. The invention provides the clamping device and crystal machining equipment. The clamping device and the crystal machining equipment are simple to operate, have low requirements on an operator and are applicable to a scene that a crystal growth face is relatively large in convexity degree; moreover a process window is also additionally provided with the first clamping part and the second clamping part to realize eccentric machining, so high operabilityis realized.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and in particular relates to a clamping device and crystal processing equipment. Background technique [0002] As a third-generation semiconductor material, silicon carbide has the characteristics of wide bandgap, high critical breakdown electric field, high thermal conductivity, and high carrier saturation migration velocity. It has great potential in high temperature, high frequency, high power, and microelectronic devices. application potential. [0003] At present, the physical vapor transport method (hereinafter referred to as PVT) is the most mature and common method for forming and growing silicon carbide. The working principle of the PVT method is mainly: place the silicon carbide raw material on the bottom of the crucible and fix the seed crystal on the top of the crucible, and sublimate the silicon carbide raw material at high temperature (for example, above 2200°C) and low pres...

AI Technical Summary

Problems solved by technology

[0006] One, since the concentricity of the silicon carbide crystal 4 and the fixed ring 1 is adjusted by hammering the pressing ring 2 and the silicon carbide crystal 4 with a hammer head, the operation is difficult and difficult to control, so it needs to be adjusted repeatedly, so that the The medium time is long, generally more than 30 minutes, which greatly affects the processing efficiency

[0007] Second, it cannot be applied to silicon carbide crystals 4 whose convexity of the upper surface 41 (growth surface) is more than 4mm. The so-called convexity refers to the difference between the highest point and the lowest point of the crystal.

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