Unlock instant, AI-driven research and patent intelligence for your innovation.

A single silicon wafer vapor phase hmds coating device

A coating device, technology of silicon wafer

Active Publication Date: 2021-07-06
宁波润华全芯微电子设备有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Solve the problems of high equipment structure and processing precision, high HMDS flow rate and large consumption, and uneven coating during vacuum coating in the past

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A single silicon wafer vapor phase hmds coating device
  • A single silicon wafer vapor phase hmds coating device
  • A single silicon wafer vapor phase hmds coating device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Example 1, such as Figure 1 to Figure 4 As shown, a vapor-phase HMDS coating device for a single silicon wafer includes a tray assembly 1 and an upper cover assembly 2, the tray assembly 1 and the upper cover assembly 2 are mutually opened and closed, and the tray assembly 1 When it is closed with the upper cover assembly 2, a coating cavity 10 is formed between the two, and the two are sealed. The upper cover assembly 2 includes an upper disc cover 21, the disc body assembly 1 includes a bottom support shield 11, and a gas-tight structure is adopted between the upper cover assembly 2 and the disc body assembly 1, and the gas The sealing structure includes an inner seal 4 and an outer seal 3 arranged between the bottom support shield 11 and the upper plate cover 21, the inner seal 4 and the outer seal 3, there is a gap between them, and the bottom support shield 11 is provided with an annular sealing air channel 112, the annular sealing air channel 112 connects the ga...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A vapor-phase HMDS coating device for a single-chip silicon wafer, relating to a semiconductor manufacturing technology, comprising a tray assembly and an upper cover assembly, the tray assembly and the upper cover assembly are mutually opened and closed, and the tray assembly and the upper cover assembly are mutually opened and closed. When the upper cover assembly is closed, a coating chamber is formed between the two, and the two are sealed. A gas-tight structure is adopted between the upper cover assembly and the tray body assembly, and the gas pressure in the gas-tight structure is greater than The pressure in the coating chamber, the upper cover assembly is provided with an HMDS inlet and an HMDS outlet communicating with the coating chamber. Wafers can be coated under normal pressure, the flow rate of HMDS is low during coating, and the consumption of HMDS coating per wafer is only 1.125 L~1.67 L, and the uniformity of coating is good at the same time. It solves the problems of high requirements on equipment structure and processing precision, high HMDS flow rate and high consumption, and uneven coating in the past vacuum coating.

Description

technical field [0001] The invention relates to a semiconductor manufacturing technology, especially a HMDS coating technology. Background technique [0002] In the semiconductor production process, photolithography is the most important link. The uniformity of the gluing process before lithography will directly affect the quality of lithography. In the coating process, most photoresists are hydrophobic, while the hydroxyl groups and residual water molecules on the surface of the silicon wafer are hydrophilic. Therefore, it is necessary to apply a tackifier before coating the glue. The function of the tackifier is to change the hydrophilicity of the silicon wafer to hydrophobicity, thereby increasing the adhesion between the photoresist and the surface of the silicon wafer. HMDS (hexamethyldisilamine) is a commonly used tackifier. HMDS is a colorless transparent liquid at room temperature with an amine-like odor. HMDS is reproductively toxic and highly volatile, so prote...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B05C9/14B05D3/04
CPCB05C9/14B05D3/0486
Inventor 傅立超施科科
Owner 宁波润华全芯微电子设备有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com