Semiconductor power device, voltage-dividing ring structure of semiconductor power device and manufacturing method thereof
A technology of power devices and voltage divider rings, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of waste of chip area and large chip area, and achieve the effect of small area and improved withstand voltage
Inactive Publication Date: 2018-05-29
SHENZHEN JINGTE INTELLIGENT MFG TECH CO LTD
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] At present, the field limiting ring technology is a voltage dividing technology commonly used in semiconductor power devices. The width and number of rings will affect the size of the breakdown voltage. Generally, the more the number of rings, the higher the breakdown voltage that can be tolerated, but at the same time, the more the number of rings, the larger the chip area occupied , this waste of chip area is unavoidable
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0027] see figure 1 and figure 2 , figure 1 It is a schematic plan view of a semiconductor power device in a preferred embodiment of the present invention, figure 2 for figure 1 Schematic diagram of the cross-sectional structure of the semiconductor power device shown. The semiconductor power device may be a MOSFET, which includes an active area, a voltage divider ring structure located around the active area, a stop ring located around the voltage divider ring structure, and a scribe lane located around the st...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a semiconductor power device, a voltage-dividing ring structure of a semiconductor power device and a manufacturing method thereof. The voltage-dividing ring structure is composed of an N type substrate, an N type epitaxial layer formed on the N type substrate, a plurality of voltage-dividing rings arranged successively from inside to outside on the N type epitaxial layer, Ntype deep junctions being formed on the N type epitaxial layer and being connected between the adjacent voltage-dividing rings, and P type shallow junctions and N type shallow junctions. The P type shallow junctions and the N type shallow junctions that are arranged alternately are formed on the N type deep junctions and are connected between the adjacent voltage-dividing rings.
Description
【Technical field】 [0001] The present invention relates to the technical field of semiconductor power devices, in particular to a semiconductor power device, a voltage dividing ring structure of the semiconductor power device and a manufacturing method thereof. 【Background technique】 [0002] The most important performance of a semiconductor power device is to block high voltage. The device is designed to withstand high voltage on the depletion layer of the PN junction, metal-semiconductor contact, and MOS interface. As the applied voltage increases, the electric field strength of the depletion layer will also increase. increases, and eventually avalanche breakdown occurs beyond the material limit. The curvature of the electric field increases in the depletion region at the edge of the device, which will cause the electric field strength to be greater than that inside the die. During the voltage increase, the edge of the die will experience avalanche breakdown earlier than th...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06
CPCH01L29/0619H01L29/0634
Inventor 不公告发明人
Owner SHENZHEN JINGTE INTELLIGENT MFG TECH CO LTD