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A drive circuit for nmos switching tube

A technology for driving circuits and switching tubes, applied in electrical components, adjusting electrical variables, and output power conversion devices, etc., can solve problems such as load damage and inrush current inflow, and achieve the effect of avoiding damage.

Active Publication Date: 2020-07-28
SHANGHAI AWINIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the existing NMOS switching tube is used as a load switch, it often occurs that a relatively large surge current flows into the load connected to it, which will cause certain damage to the load.

Method used

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  • A drive circuit for nmos switching tube
  • A drive circuit for nmos switching tube
  • A drive circuit for nmos switching tube

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Embodiment Construction

[0046]The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0047] As mentioned in the background, MOSFET (metal oxide semiconductor field effect transistor, metal oxide semiconductor field effect transistor) is a commonly used load switch, which is divided into P-type and N-type. Since the mobility of the NMOS switch is higher than that of the PMOS (positive channel Metal Oxide Semiconductor, P-type metal oxide semiconductor) switch, that is, under the same area, the on-resistance of the NMOS is lower than that of the P...

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Abstract

The invention discloses an NMOS switching tube drive circuit. A boost start module provides a start voltage for a mirror current source module, and enables the mirror current source module to start operation to provide a preset charging current for a gate of an NMOS switching tube till the voltage of the gate of the NMOS switching tube is an overlapping voltage outputted by the boost start module,wherein the overlapping voltage is the sum of the start voltage and the voltage of a source electrode of the NMOS switching tube. The circuit achieves the switching-off of the NMOS switching tube through the switching-off control of the boost start module, achieves the discharging of the charges of the gate and source electrode of the NMOS switching tube through a discharging module after the switching-off of the NMOS switching tube, and quickly switches off the NMOS switching tube. A preset charging current provided by the mirror current source module is used for control, thereby achieving the purpose of slowly starting the NMOS switching tube, preventing a bigger surge current from flowing into a connected load, and avoiding the damages to the load.

Description

technical field [0001] The present invention relates to the technical field of driving an NMOS (Negative channel Metal Oxide Semiconductor, N-type metal oxide semiconductor) switch tube, and more specifically relates to a drive circuit for an NMOS switch tube. Background technique [0002] In an electronic system, a load switch is generally used to connect or isolate two ports, such as cutting off or connecting a power supply. The load switch and its control circuit can be integrated on the same IC (Integrated Circuit, integrated circuit), or can be discrete components. MOSFET (metal oxide semiconductor field effect transistor, metal oxide semiconductor field effect transistor) is a commonly used load switch, which is divided into P type and N type. Since the mobility of the NMOS switch is higher than that of the PMOS (positive channel Metal Oxide Semiconductor, P-type metal oxide semiconductor) switch, that is, under the same area, the on-resistance of the NMOS is lower th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M3/156
CPCH02M3/156
Inventor 罗旭程吴大军程剑涛杜黎明胡建伟
Owner SHANGHAI AWINIC TECH CO LTD
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