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Active material layer, manufacturing method thereof, and display panel

A material and initial layer technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of poor performance of the active layer and poor uniformity of the active material layer, and achieve the effect of improving uniformity and good uniformity

Active Publication Date: 2022-04-15
BOE TECH GRP CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present application provides an active material layer, its manufacturing method, and a display panel, which can solve the problem of the uniformity of the active material layer due to the unsaturated dangling bonds or dislocation vacancies in the amorphous silicon deposited by PECVD. The problem of poor performance and poor performance of the active layer

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  • Active material layer, manufacturing method thereof, and display panel
  • Active material layer, manufacturing method thereof, and display panel
  • Active material layer, manufacturing method thereof, and display panel

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Embodiment Construction

[0037] In order to make the purpose, technical solution and advantages of the present application clearer, the implementation manners of the present application will be further described in detail below in conjunction with the accompanying drawings.

[0038] The active layer in the display panel is usually obtained by patterning the active material layer. The performance of the active layer is very important for the thin film transistor. The more uniform the active material layer, the better the performance of the active layer. The embodiment of the present invention provides a method for manufacturing an active material layer, which can obtain an active material layer with better uniformity.

[0039] figure 1 It is a flowchart of a method for manufacturing an active material layer provided by an embodiment of the present invention. Such as figure 1 As shown, the method may include:

[0040] Step 101 , depositing an amorphous silicon layer on the substrate using a preset me...

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Abstract

The application discloses an active material layer, a manufacturing method thereof, and a display panel, which belong to the field of display technology. The method for manufacturing the active material layer includes: depositing an amorphous silicon layer on the substrate in a preset manner, and the preset method includes: plasma-enhanced chemical vapor deposition (PECVD); depositing an atomic layer deposition method on the amorphous silicon layer A quasi-single crystal silicon layer to obtain an active material layer including an amorphous silicon layer and a quasi-single crystal silicon layer. The present application solves the problems that the amorphous silicon deposited by PECVD contains more unsaturated dangling bonds of silicon or dislocation vacancies, the uniformity of the active material layer, and the poor performance of the active layer. This application is used in the manufacture of active material layers.

Description

technical field [0001] The present application relates to the field of display technology, in particular to an active material layer, a manufacturing method thereof, and a display panel. Background technique [0002] The active layer is an indispensable part of the display panel. The active layer is usually obtained by patterning the active material layer. The material of the active material layer is usually polysilicon. [0003] In the related art, plasma-enhanced chemical vapor deposition (English: Plasma Enhanced Chemical Vapor Deposition; abbreviation: PECVD) method is used to deposit amorphous silicon when manufacturing the active material layer, and then excimer laser annealing (English: Excimer Laser Annealing ; Abbreviation: ELA) makes the deposited amorphous silicon into polysilicon, thereby obtaining the active material layer. [0004] In the related art, the amorphous silicon deposited by PECVD contains more unsaturated dangling bonds of silicon or dislocation va...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12
CPCH01L27/1222H01L27/1229H01L27/127
Inventor 曹英李小龙辛燕霞李雪萍张锴周才龙
Owner BOE TECH GRP CO LTD