Solid state image sensor and electronic apparatus

Abstract

The invention relates to a solid state image sensor and an electronic apparatus. The solid state imaging device includes a photoelectric conversion device that includes a non-chalcopyrite-based compound semiconductor of at least one layer, which is lattice bonded or pseudo lattice bonded, and is formed on a silicon substrate, and a chalcopyrite-based compound semiconductor of at least one layer which is formed on the non-chalcopyrite-based compound semiconductor. According to the solid state image sensor and the electronic apparatus, even a chalcopyrite-based material with a high light absorbing coefficient is used as a photoelectric converting layer, high sensitivity can be realized and furthermore dark current is suppressed.

Description

[0001] This application is a divisional application of the patent application No. 201410758371.6 with the filing date of December 10, 2014 and the title of the invention being “Solid State Imaging Device and Electronic Device”. technical field [0002] The present invention relates to a solid-state imaging device and an electronic device, and particularly to a solid-state imaging device and an electronic device capable of suppressing dark current. Background technique [0003] As a solid-state imaging device (image sensor) using a semiconductor, a pn junction photodiode using a semiconductor is known. Such solid-state imaging devices are mounted on many electronic devices such as digital still cameras, video cameras, surveillance cameras, mobile terminals, optical sensors, and the like. [0004] Dark current can be said to be one of the properties of solid-state imaging devices. A solid-state imaging device performs photoelectric conversion from light to electricity on inci...

AI Technical Summary

Problems solved by technology

However, since the photoelectric conversion film is basically formed on the electrode by crystal growth, it becomes polycrystalline

Images