GaN-based semiconductor laser chip detecting device and method

Abstract

An embodiment of the present invention provides a GaN-based semiconductor laser chip detecting device and method. The device comprises a chip loading module, a power supply module, a microscopic imaging module and a laser marking module. By the power supply module, a certain current is applied to a chip to be detected such that the chip to be detected emits two fluorescences from a p-plane and a front cavity surface, the microscopic imaging module receives the two fluorescences and performs fluorescence imaging on the p-plane and the front cavity surface of the chip to be detected and judges whether an active area of the chip to be detected has a failure zone and whether the front cavity surface has a catastrophic optical damage point, and finally, the p-plane directly above the failure zone of the active area of the chip to be detected is marked by the laser marking module for subsequent processing. The device has a simple structure and can mark the p-plane region directly above thefailure zone of the active region of the chip to be detected, thus the location of the failure zone in the active region is determined, functions are rich, and the device has a good practical value.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductor laser chips, and more specifically, to a detection device and method for a GaN-based semiconductor laser chip. Background technique [0002] During the use of GaN-based semiconductor laser chips, due to the existence of current stress and temperature stress, it may directly or indirectly cause damage to the active area and then produce a failure area. At the same time, catastrophic optical damage may also occur on the front cavity surface of the chip. , thereby reducing the reliability of the chip. [0003] In recent years, the application market of GaN-based semiconductor laser chips has become more and more extensive, but at the same time, the conditions for its use have become more and more stringent, and the reliability requirements have also become higher and higher. Therefore, if there is performance degradation leading to failure, it is necessary to effectively ...

AI Technical Summary

Problems solved by technology

[0004] However, the devices used in the detection of GaN-based semiconductor laser chips in the prior art are often complex in structure, and can only be detected to determine whether the detected chip is damaged. Therefore, it is urgent to provide a GaN-based semiconductor laser chip with a simple structure and comprehensive functions. Chip detection device

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