Integrated circuit with efficient heat dissipation structure

Abstract

The invention discloses an integrated circuit with an efficient heat dissipation structure. The integrated circuit comprises a first substrate, a semiconductor substrate which is arranged on the firstsubstrate, a connector which connects the substrate pad of the first substrate and the bottom of the semiconductor substrate, and a chip which is arranged on the semiconductor substrate, wherein thesubstrate pad is arranged on the surface of the first substrate. The semiconductor substrate comprises an insulating layer which is arranged at the lower part of the chip and a supporting substrate which is located at the lower part of the insulating layer. A number of through-holes arranged in an array are arranged in the supporting substrate. The through-holes are staggered and interpenetrated,so that a honeycomb structure is formed on the supporting substrate. According to the invention, the supporting substrate of the semiconductor substrate are innovatively made into the honeycomb structure; the through-holes in the honeycomb structure are interpenetrated, so that the heat generated by the chip located at the upper part of the semiconductor substrate can be quickly transmitted to theedge; and the heat dissipation of the integrated circuit is excellent.

Description

technical field [0001] The invention relates to microelectronic packaging technology, in particular to an integrated circuit with a high-efficiency heat dissipation structure. Background technique [0002] With the development of high-speed, high-density, and high-performance microelectronic chips, thermal management has become a very important issue in microsystem packaging. In large-scale integrated circuit chips fabricated on semiconductor wafers, electronic signals are carried by electric currents through conductors and transistors. The energy carried by the current in the integrated circuit chip is dissipated in the form of heat along the portion of the path the current flows through the integrated circuit. The heat P generated in the integrated circuit is the sum of the dynamic power PD and the static power PS: [0003] P=P D +P S =ACV 2 f+VI leak [0004] where A is the gate activity factor, C is the total capacitive load of all gates, V 2 is the peak-to-peak ...

AI Technical Summary

Problems solved by technology

Although this solution alleviates the phenomenon of "hot spot or over-hot spot" of the integrated circuit chip to a certain extent, it produces another tip—the protruding TSV tip of the pseudo TSV. Further hot spots are formed between the protruding TSV tips, especially after the integrated circuit chip is repackaged (such as installing a cover), the heat between the protruding TSV tips of the multiple dummy TSVs cannot be dissipated for a long time, and then Lead to inefficient heat dissipation of the entire integrated circuit device

In addition, the protruding TSV tips of multiple pseudo TSVs are all solid materials, and there are air gaps between adjacent protruding TSV tips and through the substrate through-holes, and the thermal conductivity of air is extremely poor, which seriously affects the heat transfer efficiency.

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