Bipolar integrated circuit chip based on groove dielectric isolation

Abstract

The invention discloses a bipolar integrated circuit chip based on groove dielectric isolation. The bipolar integrated circuit chip comprises a barrier layer, a first copper sheet, a plastic body, a concave groove, a fixed hole, a fixed base plate, a LOGO mark, a second copper sheet, a line surface protection layer, a pad, a chip source electrode, a chip gate electrode, a chip surface protection layer, a line layer, a metal line, an integrated circuit chip, a metal layer, a chip body and a chip groove. The bipolar integrated circuit chip has the beneficial effects that a form drain is led to the front side of the chip body through the line layer in the chip groove, thereby realizing interconnection between the front side of the chip body and the outside through the pad, shortening the interconnection distance between the chip body and the outside, and enhancing the current conducting and heat conducting effects of the chip. The bipolar integrated circuit chip has the characteristics ofhigh production efficiency and low package cost.

Description

technical field [0001] The invention relates to a bipolar integrated circuit chip based on trench dielectric isolation, which belongs to the field of bipolar integrated circuit chips. Background technique [0002] At present, most conventional bipolar IC products use the upper and lower PN junction-to-connection isolation process to isolate the islands from each other. Although the lateral diffusion size of the upper isolation is reduced, in high-voltage products, such as figure 1 As shown in the cross-sectional view of a conventional bipolar IC product, due to the thicker epitaxial layer, the lateral distance A between the upper isolation and the phosphorus bridge is still relatively wide, while the phosphorus bridge in the island is to the upper isolation, the phosphorus bridge is to the base area, and the base area To the upper septum still rely on the lateral dimension to achieve mutual electrical isolation. The thicker the epitaxy, the larger the size of its lateral di...

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Problems solved by technology

[0004] Aiming at the deficiencies in the existing technology, the purpose of the present invention is to provide a bipolar integrated circuit chip based on trench dielectric isolation, so as to solve the problem that the existing technology cannot conduct or dissipate the heat generated when the chip works in time, which restricts Performance improvement, the problem that it is not easy to promote and use

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