34results about How to "Shorten the interconnection distance" patented technology

The invention discloses a photoelectric flexible interconnection substrate and a manufacturing technology thereof. The photoelectric flexible interconnection substrate comprises a flexible circuit board and a flexible optical circuit board, wherein a bonding layer is arranged between the flexible circuit board and the flexible optical circuit board; the flexible optical circuit board comprises a flexible interconnection substrate and a semi-cured colloid layer arranged on the upper surface of the flexible interconnection substrate; a positioning groove is formed in the flexible interconnectionsubstrate; a high temperature-resistant bare optical fiber is buried into the positioning groove; and the flexible circuit board comprises a copper circuit layer and a protection layer arranged on the copper circuit layer. The photoelectric flexible interconnection substrate is compatible with the manufacturing technology of a traditional printed circuit board, so that the optical fiber is takenas one layer in the flexible circuit board, an optical signal can be transmitted and lamination process and equipment do not need to be developed for the photoelectric flexible interconnection substrate; deformation, damage and high-temperature degradation of the optical fiber due to high temperature and high pressure in the lamination process can be avoided; and the bending radius of the interconnection substrate can be reduced, the interconnection distance between the boards is reduced and high-density assembly of an electronic communication system is improved.

A multi-wafer stack structure and fabricating method thereof are disclosed. In the multi-wafer stack structure, the first interconnection layer is electrically connected to the second metal layer and the first metal layer via the first opening, the second interconnection layer is electrically connected to the first interconnection layer via the second openings, the third interconnection layer is electrically connected to the third metal layer via the third openings, and the second interconnection layer is in contact with the third interconnection layer, so that there is no need to reserve the wire pressure welding space between the wafers and a silicon substrate is eliminated, the overall device thickness of the multi-wafer stack package is reduced. Moreover, the design processing of the silicon substrate and a plurality of common pads on the silicon substrate is eliminated, thereby reducing the parasitic capacitance and power loss, and increasing the transmission speed.

A multi-wafer bonding structure and bonding method are disclosed. The multi-wafer bonding structure includes a first unit and a second unit, a metal layer of each wafer in the first unit electrically connected to an interconnection layer of the first unit, a first bonding layer in the first unit electrically connected to the interconnection layer of the first unit, a second bonding layer in the second unit electrically connected to a metal layer of the second unit, and the first bonding layer being in contact with the second bonding layer to achieve an electrical connection, thereby achieving the electrical connection among the interconnection layer of the first unit, the first bonding layer, the second bonding layer and the metal layer of each wafer.

The invention provides a photoelectric monolithic integration system based on a multi-material system. According to the system, an indium phosphide-silicon laser, a silicon passive photonic device, asilicon nitride passive photonic device, a silicon nitride-lithium niobate electro-optical modulator, a germanium-silicon detector and an electronic circuit are integrated on the same substrate, so that the size of a photoelectric system is reduced, the electrical and optical interconnection distance is reduced, and the adverse effect of parasitic parameters on the integrated system is greatly reduced. The packaging between the optical path module and the circuit module is avoided, and the packaging cost is reduced. The advantages of excellent electro-optical performance of the lithium niobatematerial, low loss, low polarization sensitivity and high process tolerance of the silicon nitride material and high refractive index of the silicon material are exerted, and a monolithic photoelectric integrated system with excellent performance is realized.

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first and a second active dies separately arranged, an insulating encapsulation at least laterally encapsulating the first and the second active dies, a redistribution layer disposed on the insulating encapsulation, the first and the second active dies, and a fine-pitched die disposed on the redistribution layer and extending over a gap between the first and the second active dies. The fine-pitched die has a function different from the first and the second active dies. A die connector of the fine-pitched die is connected to a conductive feature of the first active die through a first conductive pathway of the redistribution layer. A first connecting length of the first conductive pathway is substantially equal to a shortest distance between the die connector of the fine-pitched die and the conductive feature of the first active die.

Integrated circuit fabrication techniques are provided which allow non-horizontal / non-vertical wires to traverse the entire chip surface, rather than just the comers as in the conventional Manhattan geometry, while interconnecting circuit points. This is achieved by employing a variable rotational assignment methodology with respect to the interconnect layers or levels during the IC fabrication operation. These techniques thus eliminate the litho step problem, reduce interconnect distances and lessen the influence of capacitance interaction between interconnect wires.

A multi-wafer stack structure and fabricating method thereof are disclosed. In the multi-wafer stack structure, the first interconnection layer is electrically connected to the second metal layer and the first metal layer via the first opening, the second interconnection layer is electrically connected to the first interconnection layer via the second openings, the third interconnection layer is electrically connected to the third metal layer via the third openings, and the second interconnection layer is in contact with the third interconnection layer, so that there is no need to reserve the wire pressure welding space between the wafers and a silicon substrate is eliminated, the overall device thickness of the multi-wafer stack package is reduced. Moreover, the design processing of the silicon substrate and a plurality of common pads on the silicon substrate is eliminated, thereby reducing the parasitic capacitance and power loss, and increasing the transmission speed.

The invention discloses a MOSFET packaging structure and a manufacturing method thereof. The packaging structure includes a silicon substrate and a MOSFET chip. The front side of the MOSFET chip includes a source conductive pad and a gate conductive pad, and the back side includes a drain region and a metal layer. There is a sinking groove on the surface of the substrate, and the bottom of the sinking groove is laid with a conductive layer extending to the surface of the substrate as a drain conductive pad. The back of the MOSFET chip is mounted on the bottom of the sinking groove, and the metal layer and the sinking groove The conductive layer at the bottom is connected by metal bonding, the conductors interconnected with the outside are formed on the source conductive pad, the gate conductive pad and the drain conductive pad, and the part other than the conductor on the front side of the silicon substrate is encapsulated by the protective layer. The present invention guides the drain current on the back of the MOSFET with a vertical structure to the front of the MOSFET, realizes that the source, gate, and drain are electrically on the same side for wafer-level packaging, and the large-area conductive layer ensures a good chip Heat dissipation effect; avoiding the TSV process through silicon vias, simplifying the process steps and reducing the packaging cost.

The invention relates to a groove-interconnected wafer level metal-oxide-semiconductor field effect transistor (MOSFET) encapsulation structure and an implementation method. The structure comprises a chip body (1-1); a chip source electrode (2-1) and a chip gate electrode (2-2) are arranged on the front surface of the chip body; chip surface protection layers (3) are arranged on the front surfaces of the chip source electrode and the chip gate electrode of the chip body; chip grooves (1-2) pass through the front surface and the back surface of the chip body; circuit layers (4) are arranged onthe surface of the chip source electrode, the surface of the chip gate electrode and the surfaces of the chip surface protection layers (3) and in the chip grooves (1-2); a circuit surface protectionlayer (5) is arranged on the surface of the circuit layer; welded balls (6) are arranged on the surfaces of the circuit layers (4) on the front surface of the chip body (1-1); a back surface metal layer (7) is arranged on the back surface (1-3) of the chip body (1-1); and the back surface metal layer (7) is interconnected with the circuit layers (4). The encapsulation structure with high performance, and a process method which is used for implementing the structure and has high production efficiency and is low in encapsulation cost are provided.

The invention provides a three-dimensional integrated chip. The chip comprises: a first programmable array assembly which comprises a first bonding region; a first storage array assembly which comprises a second bonding region; and a second storage array assembly which comprises a third bonding region. The first bonding region is in bonding connection with the second bonding region, and the second bonding region is in bonding connection with the third bonding region, so that the first programmable array assembly, the first storage array assembly and the second storage array assembly are bonded. Therefore, the storage space of the first programmable array assembly is expanded, the first programmable array assembly, the first storage array assembly and the second storage array assembly are bonded through the three-dimensional bonding technology, the interconnection distance is reduced, high bandwidth and low power consumption of storage access are achieved, and the storage wall problem existing in the prior art is solved.

The invention provides a photoelectric monolithic integrated system based on a multi-material system, the system includes an indium phosphide-silicon laser, a silicon passive photonic device, a silicon nitride passive photonic device, and a silicon nitride-lithium niobate electro-optic modulator The germanium-silicon detector and the electronic circuit are integrated on the same substrate, which is used to reduce the size of the optoelectronic system, reduce the electrical and optical interconnection distance, thereby greatly reducing the adverse effects of parasitic parameters on the integrated system; avoiding the optical path The packaging between the module and the circuit module reduces the packaging cost. Take advantage of the excellent electro-optical performance of lithium niobate material, low loss, low polarization sensitivity, high process tolerance and high refractive index of silicon nitride material to realize a monolithic optoelectronic integrated system with excellent performance.

A multi-wafer stacking structure and fabrication method are disclosed. In the multi-wafer stacking structure, a first interconnection layer is electrically connected to a second metal layer and a first metal layer via a first opening, a second interconnection layer is electrically connected to the first interconnection layer via a second opening, a third interconnection layer is electrically connected to a third metal layer via a third opening, and the second interconnection layer is electrically connected to the third interconnection layer. It is unnecessary to reserve a bonding lead space between wafers, a silicon substrate is eliminated, and the multi-wafer stacking thickness is reduced while multi-wafer interconnection is realized, so that the overall device thickness is reduced after multi-wafer stacked package. Moreover, there is no need of leads, so as to eliminate design processing of a silicon substrate and a plurality of shared bonding pads on the silicon substrate.

The invention discloses an optical transmitter, which is applied in a photoelectric interconnection interface system, which includes: an electric chip and an optical chip connected to each other; the electric chip includes: a driver module and a matching module; Chip transmission; the optical chip is used to modulate the optical signal according to the driving signal to obtain a modulated signal and output it; the matching module is used to perform impedance matching on the driving signal output by the optical chip. The invention has the advantages of unrestricted device selection of the light emitter and high impedance matching precision.

The invention relates to a rear through-hole interconnected wafer level MOSFET (metal oxide semiconductor field effect transistor) packaging structure and an implementation method. A chip source electrode (2-1) and a chip gate electrode (2-2) are arranged on the front surface of a chip body (1-1); chip surface protecting layers (3) are arranged on the front surfaces of the chip body, the chip source electrode and the chip gate electrode; front surface circuit layers (4) are arranged on the surfaces of the chip body, the chip source electrode, the chip gate electrode and the chip surface protecting layers; circuit surface protecting layers (5) are arranged on the surfaces of the front surface circuit layers and the chip surface protecting layers; solder balls (7) are arranged on the surfaces of the front surface circuit layers; a chip through hole (1-2) is arranged by penetrating the front surface and the back surface of the chip body; and a circuit layer (6) is arranged on the back surface of the chip body, the circuit layer (6) is filled in the chip through hole, and the circuit layer filled in the chip through hole is in direct contact with the side wall of the chip through holeand interconnected with the front surface circuit layers. According to the invention, the packaging structure has high performance; and the process method which is used for implementing the structureand has the advantages of high production efficiency and low packaging cost.

The invention relates to a ferroelectric phase transition hybrid memory unit, memory and operation method. The ferroelectric phase change hybrid storage unit includes: a lower electrode, a functional layer and an upper electrode arranged in sequence; the lower electrode is a low work function electrode, and the upper electrode is a high work function electrode; the functional layer is a ferroelectric phase change material. By adopting the above structure, the ferroelectric phase-change hybrid storage unit can selectively work in the ferroelectric storage state or the phase-change storage state.

The invention discloses a vertical pHEMT transistor structure and a switch chip. The transistor comprises a buffer layer, a channel layer, a first isolation layer and a barrier layer which are sequentially arranged around a metallized through hole from the inner layer to the outer layer, the metallized through hole, the buffer layer, the channel layer, the first isolation layer and the barrier layer are each of a columnar structure, the axial direction of the metallized through hole is the same as the normal direction of a substrate, a source electrode, a grid electrode and a drain electrode are arranged on the barrier layer, the source electrode, the grid electrode and the drain electrode are horizontally or vertically arranged, and the grid electrode surrounds the columnar side wall fora circle during vertical arrangement. The switch chip is formed by connecting a plurality of vertical pHEMT transistors in series or in parallel in the vertical direction. The transistor and the switch chip provided by the invention have the characteristics of high isolation, large power capacity, small size, good integration, low power consumption, high efficiency and good broadband characteristic.

The invention provides a three-dimensional stacked interconnection structure for a SiC device based on nano-silver soldering paste, and a preparation method. The interconnection structure comprises the nano-silver soldering paste and a ceramic plate. The nano-silver soldering paste is disposed in through holes in the ceramic plate, and a conductive circuit is formed after sintering. Furthermore, the nano-silver soldering paste is sintered to achieve the stacked interconnection of chip electrodes. The ceramic plate serves as an insulating plate and an underlay layer, thereby increasing the distance between two chips, and avoiding the edge breakdown effect between the chips. The connection of the interconnection structure can achieve the longitudinal interconnection of a plurality of chips,and the selected material comprises a ceramic substrate and a nano-silver soldering paste. The main component of the sinter nano-silver soldering paste is silver, and the conductivity and temperatureresistance of the sintered nano-silver soldering paste are close to the conductivity and temperature resistance of pure silver. The nano-silver soldering paste and the ceramic substrate are both madeof high temperature resistant materials, and can be used for the interconnection of a big power chip. Compared with other parking modes, the structure is simple in structure, is high in operability, is wide in application range, and can achieve the simple and effective high-temperature and high-voltage stacked packaging.

The invention discloses a method for manufacturing vertically interconnected substrates based on laser nano-processing technology. Firstly, a first circuit wiring layer is formed on one side of the substrate through photolithography, corrosion, and glue removal of the dielectric layer, and then the laser nano-processing technology is used to form the first circuit wiring layer on one side of the substrate. Blind holes are opened at the corresponding positions on the substrate, and then the substrate is placed in the electrodeposition solution for electrodeposition to fill the blind holes, and finally the second circuit is formed on the other side of the substrate through photolithography, corrosion, and degumming of the dielectric layer Wiring layer, the manufacturing method has a simple process, high precision of laser nano-processing technology, no void inside the through hole, reliable interconnection, and improves the density and reliability of the three-dimensional packaging of the LCP flexible substrate. At the same time, the metallized through hole is used to realize the double The vertical interconnection between the surface circuit wiring layers can effectively shorten the interconnection distance, reduce signal delay, reduce parasitic inductance and capacitance, improve high-frequency characteristics, and thus improve system integration performance.