A Photoelectric Monolithic Integrated System Based on Multi-material System

Abstract

The invention provides a photoelectric monolithic integrated system based on a multi-material system, the system includes an indium phosphide-silicon laser, a silicon passive photonic device, a silicon nitride passive photonic device, and a silicon nitride-lithium niobate electro-optic modulator The germanium-silicon detector and the electronic circuit are integrated on the same substrate, which is used to reduce the size of the optoelectronic system, reduce the electrical and optical interconnection distance, thereby greatly reducing the adverse effects of parasitic parameters on the integrated system; avoiding the optical path The packaging between the module and the circuit module reduces the packaging cost. Take advantage of the excellent electro-optical performance of lithium niobate material, low loss, low polarization sensitivity, high process tolerance and high refractive index of silicon nitride material to realize a monolithic optoelectronic integrated system with excellent performance.

Description

technical field [0001] The invention relates to the technical field of monolithic photoelectric heterogeneous integration, in particular to a photoelectric monolithic integration system based on a multi-material system. Background technique [0002] The optoelectronic system combines the transmission advantages of light and the processing advantages of electricity, and can realize high-speed signal transmission and processing. The integration of optoelectronic systems can be realized by hybrid integration technology or heterogeneous integration technology. Hybrid integration is the integration of optoelectronic devices and electronic devices through packaging technology. Compared with hybrid integration, optoelectronic monolithic integration technology greatly reduces system volume, power consumption, parasitic parameters and packaging costs by integrating optoelectronic devices, electronics and electronic circuits on the same substrate, and finally achieves high-speed, hig...

AI Technical Summary

Problems solved by technology

However, the shortcomings of these two material platforms are: silicon-based monolithic integration is difficult to integrate active devices such as light sources, silicon-based modulators have large losses and high half-wave voltages; indium phosphide monolithic integration costs are high, and it is difficult to achieve large-scale integrated

Images