Mosfet packaging structure and its manufacturing method

Abstract

The invention discloses a MOSFET packaging structure and a manufacturing method thereof. The packaging structure includes a silicon substrate and a MOSFET chip. The front side of the MOSFET chip includes a source conductive pad and a gate conductive pad, and the back side includes a drain region and a metal layer. There is a sinking groove on the surface of the substrate, and the bottom of the sinking groove is laid with a conductive layer extending to the surface of the substrate as a drain conductive pad. The back of the MOSFET chip is mounted on the bottom of the sinking groove, and the metal layer and the sinking groove The conductive layer at the bottom is connected by metal bonding, the conductors interconnected with the outside are formed on the source conductive pad, the gate conductive pad and the drain conductive pad, and the part other than the conductor on the front side of the silicon substrate is encapsulated by the protective layer. The present invention guides the drain current on the back of the MOSFET with a vertical structure to the front of the MOSFET, realizes that the source, gate, and drain are electrically on the same side for wafer-level packaging, and the large-area conductive layer ensures a good chip Heat dissipation effect; avoiding the TSV process through silicon vias, simplifying the process steps and reducing the packaging cost.

Description

technical field [0001] The invention belongs to the technical field of semiconductor packaging, and in particular relates to a MOSFET packaging structure and a manufacturing method thereof. Background technique [0002] MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a field effect transistor that uses electric field effects to control semiconductors. Due to the characteristic of realizing low power consumption voltage control, MOSFET has been widely used in a large number of electronic devices in recent years, including power supplies, automotive electronics, computers and smart phones, and has received more and more attention. [0003] A MOSFET device operates by applying an appropriate voltage to the gate of the MOSFET device, which turns on the device and forms a channel connecting the source and drain of the MOSFET to allow current to flow. In a MOSFET device, it is desirable to have a low drain-on-source resistance, RDS(on), when the transistor is on. T...

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Problems solved by technology

The back gold process of this packaging solution is complicated, the yield rate is low, and the cost of using through-silicon via (TSV) technology is high

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