Photoelectric monolithic integration system based on multi-material system

Abstract

The invention provides a photoelectric monolithic integration system based on a multi-material system. According to the system, an indium phosphide-silicon laser, a silicon passive photonic device, asilicon nitride passive photonic device, a silicon nitride-lithium niobate electro-optical modulator, a germanium-silicon detector and an electronic circuit are integrated on the same substrate, so that the size of a photoelectric system is reduced, the electrical and optical interconnection distance is reduced, and the adverse effect of parasitic parameters on the integrated system is greatly reduced. The packaging between the optical path module and the circuit module is avoided, and the packaging cost is reduced. The advantages of excellent electro-optical performance of the lithium niobatematerial, low loss, low polarization sensitivity and high process tolerance of the silicon nitride material and high refractive index of the silicon material are exerted, and a monolithic photoelectric integrated system with excellent performance is realized.

Description

technical field [0001] The invention relates to the technical field of monolithic photoelectric heterogeneous integration, in particular to a photoelectric monolithic integration system based on a multi-material system. Background technique [0002] The optoelectronic system combines the transmission advantages of light and the processing advantages of electricity, and can realize high-speed signal transmission and processing. The integration of optoelectronic systems can be realized by hybrid integration technology or heterogeneous integration technology. Hybrid integration is the integration of optoelectronic devices and electronic devices through packaging technology. Compared with hybrid integration, optoelectronic monolithic integration technology greatly reduces system volume, power consumption, parasitic parameters and packaging costs by integrating optoelectronic devices, electronics and electronic circuits on the same substrate, and finally achieves high-speed, hig...

AI Technical Summary

Problems solved by technology

However, the shortcomings of these two material platforms are: silicon-based monolithic integration is difficult to integrate active devices such as light sources, silicon-based modulators have large losses and high half-wave voltages; indium phosphide monolithic integration costs are high, and it is difficult to achieve large-scale integrated

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