Three-dimensional stack interconnection structure and preparation method of SIC devices based on nano-silver solder paste
An interconnection structure and three-dimensional stacking technology, applied in semiconductor/solid-state device manufacturing, nanotechnology for materials and surface science, nanotechnology, etc., can solve the problem of affecting the selection of secondary welding materials, increasing parasitic inductance and resistance of leads, Increase packaging reliability and other issues to achieve the effect of alleviating the edge breakdown effect, increasing the contact area, and shortening the interconnection distance
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[0025] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0026] Embodiments of the present invention provide a three-dimensional stacked structure of SiC devices based on nano-silver solder paste such as figure 1 As shown, it includes: three silicon carbide power chips 1, 4, 7, all of which are vertical structure diodes; two-layer interconnection structures 2, 3, 5, 6. The interconnection structure is composed of ceramic substrates 3 and 6 with through holes and nano-silver solder paste 2 and 5. The diam...
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