The invention provides a three-dimensional stacked
interconnection structure for a SiC device based on nano-silver
soldering paste, and a preparation method. The
interconnection structure comprises the nano-silver
soldering paste and a
ceramic plate. The nano-silver
soldering paste is disposed in through holes in the
ceramic plate, and a conductive circuit is formed after
sintering. Furthermore, the nano-silver soldering paste is sintered to achieve the stacked
interconnection of
chip electrodes. The
ceramic plate serves as an insulating plate and an
underlay layer, thereby increasing the distance between two chips, and avoiding the edge breakdown effect between the chips. The connection of the interconnection structure can achieve the longitudinal interconnection of a plurality of chips,and the selected material comprises a
ceramic substrate and a nano-silver soldering paste. The main component of the sinter nano-silver soldering paste is silver, and the
conductivity and temperatureresistance of the sintered nano-silver soldering paste are close to the
conductivity and
temperature resistance of pure silver. The nano-silver soldering paste and the
ceramic substrate are both madeof high temperature resistant materials, and can be used for the interconnection of a big power
chip. Compared with other parking
modes, the structure is simple in structure, is high in
operability, is wide in application range, and can achieve the simple and effective high-temperature and high-
voltage stacked packaging.