A kind of ferroelectric phase change hybrid memory unit, memory and operation method

Abstract

The invention relates to a ferroelectric phase transition hybrid memory unit, memory and operation method. The ferroelectric phase change hybrid storage unit includes: a lower electrode, a functional layer and an upper electrode arranged in sequence; the lower electrode is a low work function electrode, and the upper electrode is a high work function electrode; the functional layer is a ferroelectric phase change material. By adopting the above structure, the ferroelectric phase-change hybrid storage unit can selectively work in the ferroelectric storage state or the phase-change storage state.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a ferroelectric phase transition hybrid memory unit, a memory and an operation method. Background technique [0002] The popularity of smart phones and various wearable electronic devices has led to an explosive increase in the amount of data that needs to be stored, and has also put forward higher requirements for memory capacity, power consumption and other performance. Existing memory products include volatile DRAM and SRAM, non-volatile flash memory Flash, ferroelectric storage FeRAM, phase change storage PCM, etc. DRAM and SRAM have extremely fast read and write speeds, but the storage density is very small; due to the development of 3D NAND technology, Flash can currently achieve a substantial increase in storage capacity and is expected to replace HDD as the new main memory, but its single-layer density is already close to the limit , the number of stackable laye...

AI Technical Summary

Problems solved by technology

DRAM and SRAM have extremely fast read and write speeds, but the storage density is very small; due to the development of 3D NAND technology, Flash can currently achieve a substantial increase in storage capacity and is expected to replace HDD as the new main memory, but its single-layer density is already close to the limit , the number of stackable layers is also limited by the achievable aspect ratio of deep hole etching and the step coverage of material filling, and its read and write speed is at the level of 100us, which cannot achieve faster speed

[0003] In recent years, ferroelectric storage FeRAM has been developed due to the CMOS process compatible material HfO 2 Ferroelectricity was discovered in the ferroelectricity, and it has been favored again. Its extremely low power consumption and fast read and write capabilities have attracted much attention. Its fast read and write can make it reach the level of DRAM, and its low power consumption and non-volatility are Makes it a promising replacement for DRAM, but has poorer endurance

[0004] Phase change memory PCM has a three-dimensional stackability similar to flash, which can achieve large capacity and is expected to replace flash, but its read and write speed is at the level of 100ns, and due to the low resistance of the crystalline state, in order to melt the material and make it amorphous, it is necessary to use Large current erasing and writing, in the current level of integration, the problem of power consumption is more serious

Images