Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A Method for Annealing Displaced Defects Based on Ionizing Radiation Induction

A technology of ionizing radiation and displacement, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems such as device displacement damage, and achieve the effects of easy operation, simple steps, and cost reduction

Active Publication Date: 2020-06-09
HARBIN INST OF TECH
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that particle radiation can cause displacement damage to devices, and to provide a method for annealing induced displacement defects based on ionizing radiation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Method for Annealing Displaced Defects Based on Ionizing Radiation Induction
  • A Method for Annealing Displaced Defects Based on Ionizing Radiation Induction
  • A Method for Annealing Displaced Defects Based on Ionizing Radiation Induction

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0019] Specific embodiment 1: This embodiment is a method based on ionizing radiation-induced displacement defect annealing, which is performed in the following steps:

[0020] 1. Measure the thickness a of the chip containing the displacement defect sample and the farthest distance b from the surface of the area containing the displacement defect;

[0021] 2. Select the type of incident particle, and then input the radiation source energy of the incident particle through Geant4 software, calculate the incident depth d of the incident particle in the sample chip, and ensure that the input radiation source energy satisfies d>2a or d>4b;

[0022] 3. According to the energy of the radiation source in step 2, through Geant4 software, calculate the ionized absorbed dose Id and the displacement absorbed dose Dd of the incident particle per unit fluence in the sample;

[0023] According to the distribution of the ionization absorbed dose Id and the displacement absorbed dose Dd with the incid...

specific Embodiment approach 2

[0029] Embodiment 2: This embodiment is different from Embodiment 1 in that the irradiated particles are electrons, protons, heavy ions, neutrons, photons, or mesons. Others are the same as the first embodiment.

specific Embodiment approach 3

[0030] Specific embodiment three: This embodiment is different from specific embodiment one or two in that the sample is a MIS device or a bipolar process device. Others are the same as the first or second embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for inducing the defect annealing based on ionization irradiation, and aims at solving a problem that the particle radiation will cause the displacement damage to a device. The method comprises the steps: calculating the ionization / displacement absorbed dose and range of unit fluence incident particles based on a Monte Carlo computing method; determining the typeof incident particles according to the proportional relation between the ionization and the displacement absorbed dose and the features of a sample, thereby guaranteeing that the incident particles can promote the annealing of existing defect in the sample in a conveying process of the sample. The method is simple in steps, and is easy for operation. The method is used for the technical field of spatial environment effects, nuclear science and application technologies.

Description

Technical field [0001] The invention relates to a method for annealing a displacement defect based on ionizing radiation induced displacement. Background technique [0002] Spacecraft orbiting in space will be affected by many environmental factors: such as particle radiation, microgravity, and atomic oxygen. With the rapid development of electronic technology, the application of electronic components has become more and more extensive. On satellites, spacecraft and space shuttles, electronic devices are widely used to achieve various functions. For electronic devices, particle radiation is the most deadly environmental factor. Early-launched spacecraft failed many times due to damage. With the development of science and technology, although there are fewer and fewer cases of fatal failures in spacecraft such as satellites, they still happen from time to time. Space particle radiation will shorten the working life of satellites and cause huge losses. Even if packaging and pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/268H01L21/324
CPCH01L21/268H01L21/324
Inventor 李兴冀杨剑群刘超铭吕钢
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com